X-On Electronics has gained recognition as a prominent supplier of SI4888DY-T1-E3 MOSFETs across the USA, India, Europe, Australia, and various other global locations. SI4888DY-T1-E3 MOSFETs are a product manufactured by Vishay. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

SI4888DY-T1-E3 Vishay

SI4888DY-T1-E3 electronic component of Vishay
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Part No.SI4888DY-T1-E3
Manufacturer: Vishay
Category: MOSFETs
Description: MOSFET 30V 16A 3.5W
Ultra-low capacitance TVS diode array for protection of high-speed data lines.
Datasheet: SI4888DY-T1-E3 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 1.3882 ea
Line Total: USD 1.39 
Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Thu. 07 Nov to Wed. 13 Nov
MOQ : 1
Multiples : 1
1 : USD 1.3882
10 : USD 1.3641
50 : USD 1.2796
250 : USD 1.0684
500 : USD 0.9959
1000 : USD 0.9597

   
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RoHS - XON
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Pd - Power Dissipation
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We are delighted to provide the SI4888DY-T1-E3 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SI4888DY-T1-E3 and other electronic components in the MOSFETs category and beyond.

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The Vishay SI4888DY-T1-E3 is a monolithic, high-speed, NPN silicon transistor designed for use as an amplifier, level shifter, or switch. It has a maximum collector-emitter voltage (VCEO) of 40V, collector-base voltage (VCBO) of 45V, and an emitter-base voltage (VEBO) of 6V. This device has a maximum collector current (IC) of 800 mA and maximum power dissipation (PD) of 1.5 W. It also has a high gain (hFE) at 200 minimum, a high frequency range of 300 MHz minimum, and a maximum operating temperature of 150°C.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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