New Product Si4909DY Vishay Siliconix Dual P-Channel 40 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 d V (V) R () Q (Typ.) DS DS(on) I (A) g D Definition 0.027 at V = - 10 V - 8 GS TrenchFET Power MOSFET - 40 21.7 nC 0.034 at V = - 4.5 V - 7.2 100 % R Tested GS g 100 % UIS Tested Compliant to RoHS Directive 2002/95/EC S S 1 2 APPLICATIONS SO-8 Load Switches - Notebook PCs S D - Desktop PCs 1 1 8 1 G G 1 2 G D 2 7 1 1 S D 2 3 6 2 G D 2 4 5 2 Top View D D 1 2 Ordering Information: Si4909DY-T1-GE3 (Lead (Pb)-free and Halogen-free) P-Channel MOSFET P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) A Parameter Symbol Limit Unit V Drain-Source Voltage - 40 DS V V Gate-Source Voltage 20 GS T = 25 C - 8.0 C T = 70 C - 6.5 C Continuous Drain Current (T = 150 C) I J D a, b T = 25 C - 6.4 A a, b T = 70 C - 5.1 A A e I - 30 Pulsed Drain Current DM - 2.6 T = 25 C C I Continuous Source-Drain Diode Current S a, b T = 25 C - 1.6 A I Avalanche Current - 20 AS L = 0.1 mH E Single-Pulse Avalanche Energy 20 mJ AS T = 25 C 3.2 C T = 70 C 2.1 C P Maximum Power Dissipation W D a, b T = 25 C 2.0 A a, b T = 70 C 1.28 A Operating Junction and Storage Temperature Range T , T - 55 to 150 C J stg THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit a, c R Maximum Junction-to-Ambient t 10 s 47 62.5 thJA C/W R Maximum Junction-to-Foot Steady State 29 38 thJF Notes: a. Surface mounted on 1 x 1 FR4 board. b. t = 10 s. c. Maximum under steady state conditions is 110 C/W. d. Based on T = 25 C. C e. Limited by package. Document Number: 67077 www.vishay.com S10-2603-Rev. A, 15-Nov-10 1New Product Si4909DY Vishay Siliconix SPECIFICATIONS (T = 25 C, unless otherwise noted) J Parameter Symbol Test Conditions Min. Typ.Max.Unit Static V V = 0 V, I = - 250 A Drain-Source Breakdown Voltage - 40 V DS GS D V Temperature Coefficient V /T - 34 DS DS J I = - 250 A mV/C D V Temperature Coefficient V /T 4.8 GS(th) GS(th) J V V = V , I = - 250 A Gate-Source Threshold Voltage - 1.2 - 2.5 V GS(th) DS GS D Gate-Source Leakage I V = 0 V, V = 20 V 100 nA GSS DS GS V = - 40 V, V = 0 V - 1 DS GS I Zero Gate Voltage Drain Current A DSS V = - 40 V, V = 0 V, T = 55 C - 10 DS GS J a I V - 10 V, V = - 10 V - 20 A On-State Drain Current D(on) DS GS V = - 10 V, I = - 8 A 0.021 0.027 GS D a R Drain-Source On-State Resistance DS(on) V = - 4.5 V, I = - 5 A 0.027 0.034 GS D a g V = - 10 V, I = - 8 A 22 S Forward Transconductance fs DS D b Dynamic C Input Capacitance 2000 iss C V = - 20 V, V = 0 V, f = 1 MHz Output Capacitance 240 pF oss DS GS Reverse Transfer Capacitance C 202 rss V = - 20 V, V = - 10 V, I = - 10 A 41.5 63 DS GS D Q Total Gate Charge g 21.7 33 nC Q V = - 20 V, V = - 4.5 V, I = - 10 A Gate-Source Charge 5.6 gs DS GS D Q Gate-Drain Charge 9.8 gd Gate Resistance R f = 1 MHz 1.5 6 12 g t Turn-On Delay Time 10 20 d(on) t Rise Time V = - 20 V, R = 2 918 r DD L I - 10 A, V = - 10 V, R = 1 t Turn-Off DelayTime D GEN g 50 90 d(off) t Fall Time 13 26 f ns Turn-On Delay Time t 42 75 d(on) t Rise Time V = - 20 V, R = 2 40 70 r DD L I - 10 A, V = - 4.5 V, R = 1 t Turn-Off DelayTime D GEN g 40 70 d(off) Fall Time t 18 35 f Drain-Source Body Diode Characteristics Continous Source-Drain Diode Current I T = 25 C - 2.6 S C A Pulse Diode Forward Current I - 30 SM Body Diode Voltage V I = - 2 A, V = 0 V - 0.75 - 1.2 V SD S GS Body Diode Reverse Recovery Time t 41 80 ns rr Body Diode Reverse Recovery Charge Q 32 65 nC rr I = - 2 A, dI/dt = 100 A/s, T = 25 C F J Reverse Recovery Fall Time t 15 a ns Reverse Recovery Rise Time t 26 b Notes: a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com Document Number: 67077 2 S10-2603-Rev. A, 15-Nov-10