SI5513CDC-T1-GE3 Vishay

SI5513CDC-T1-GE3 electronic component of Vishay
SI5513CDC-T1-GE3 Vishay
SI5513CDC-T1-GE3 MOSFETs
SI5513CDC-T1-GE3  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of SI5513CDC-T1-GE3 MOSFETs across the USA, India, Europe, Australia, and various other global locations. SI5513CDC-T1-GE3 MOSFETs are a product manufactured by Vishay. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

Part No. SI5513CDC-T1-GE3
Manufacturer: Vishay
Category: MOSFETs
Description: MOSFET 20V 4A/3.7A N/P-CH COMPLIMENTARY MOSFET
Datasheet: SI5513CDC-T1-GE3 Datasheet (PDF)
Price (USD)
1: USD 0.8772 ea
Line Total: USD 0.88 
Availability : 0
  
QtyUnit Price
1$ 0.8772
10$ 0.8603
30$ 0.6349
100$ 0.5617

Availability 0
Ship by Fri. 26 Sep to Thu. 02 Oct
MOQ : 3000
Multiples : 3000
QtyUnit Price
3000$ 0.4794


Availability 0
Ship by Fri. 26 Sep to Thu. 02 Oct
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 1.358
10$ 1.1192
100$ 0.8351
500$ 0.6562
1000$ 0.5071


Availability 0
Ship by Fri. 26 Sep to Thu. 02 Oct
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 1.358
10$ 1.1192
100$ 0.8351
500$ 0.6562
1000$ 0.5071


Availability 0
Ship by Fri. 26 Sep to Thu. 02 Oct
MOQ : 3000
Multiples : 3000
QtyUnit Price
3000$ 0.104
6000$ 0.1027
9000$ 0.102
12000$ 0.1014
15000$ 0.0994


Availability 0
Ship by Wed. 24 Sep to Fri. 26 Sep
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 1.763
10$ 0.836
100$ 0.4541
500$ 0.3568
1000$ 0.2757
3000$ 0.2501


Availability 0
Ship by Fri. 26 Sep to Thu. 02 Oct
MOQ : 41
Multiples : 1
QtyUnit Price
41$ 0.2205


Availability 0
Ship by Fri. 26 Sep to Thu. 02 Oct
MOQ : 3000
Multiples : 3000
QtyUnit Price
3000$ 0.1987


Availability 0
Ship by Fri. 26 Sep to Thu. 02 Oct
MOQ : 3000
Multiples : 3000
QtyUnit Price
3000$ 0.1987


Availability 0
Ship by Fri. 26 Sep to Thu. 02 Oct
MOQ : 3000
Multiples : 3000
QtyUnit Price
3000$ 0.234


Availability 0
Ship by Fri. 26 Sep to Thu. 02 Oct
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 0.8772
10$ 0.8603
30$ 0.6349
100$ 0.5617

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Transistor Polarity
Minimum Operating Temperature
Maximum Operating Temperature
Mounting Style
Package / Case
Packaging
Configuration
Brand
Continuous Drain Current
Drain-Source Breakdown Voltage
Forward Transconductance - Min
Gate-Source Breakdown Voltage
Power Dissipation
Rds On
Gate Charge Qg
Factory Pack Quantity :
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the SI5513CDC-T1-GE3 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SI5513CDC-T1-GE3 and other electronic components in the MOSFETs category and beyond.

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The SI5513CDC-T1-GE3 with MOSFET 20V 4A/3.7A N/P-CH Complimentary MOSFET is a N-channel and P-channel enhancement mode power MOSFET manufactured by Vishay. It is designed for high speed switching applications, and it provides excellent switching performance combined with low on-resistance. It is capable of switching 4A at 20V DC, and 3.7A at 25°C and a maximum junction temperature of 175°C, making it ideal for use in power management, automotive, and home automation applications. The package of this device is a TO-252 (D-PAK). It also has an operating temperature range between -55°C to 175°C.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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