Product Information

SI7113ADN-T1-GE3

SI7113ADN-T1-GE3 electronic component of Vishay

Datasheet
MOSFET -100V Vds 20V Vgs PowerPAK 1212-8
Manufacturer: Vishay
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 2.0631 ea
Line Total: USD 2.06

2153 - Global Stock
Ships to you between
Fri. 31 May to Wed. 05 Jun
MOQ: 1  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
2001 - WHS 1


Ships to you between
Fri. 31 May to Wed. 05 Jun

MOQ : 1
Multiples : 1
1 : USD 2.1776
10 : USD 1.8915
30 : USD 1.7122
100 : USD 1.3758
500 : USD 1.2932
1000 : USD 1.257

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Configuration
Series
Brand
Forward Transconductance - Min
Fall Time
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
Cnhts
Hts Code
Mxhts
LoadingGif

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Additional Infomation About Product

SI7113ADN-T1-GE3 with MOSFET -100V Vds 20V Vgs PowerPAK 1212-8 is a MOSFET (metal-oxide semiconductor field-effect transistor) manufactured by Vishay. This particular MOSFET features a drain-source voltage (Vds) of -100 V (indicating its power handling capability), a gate-source voltage (Vgs) of 20 V, and a PowerPAK 1212-8 package. Its intended applications include DC/DC/AC/AC converters, flyback converters, output rectification, and battery chargers.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

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