Si7613DN-T1-GE3 Vishay

Si7613DN-T1-GE3 electronic component of Vishay
Si7613DN-T1-GE3 Vishay
Si7613DN-T1-GE3 MOSFETs
Si7613DN-T1-GE3  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of Si7613DN-T1-GE3 MOSFETs across the USA, India, Europe, Australia, and various other global locations. Si7613DN-T1-GE3 MOSFETs are a product manufactured by Vishay. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

Part No.Si7613DN-T1-GE3
Manufacturer:Vishay
Category:MOSFETs
Description:MOSFET 20V 35A 52.1W 8.7mohm @ 10V
Datasheet:Si7613DN-T1-GE3 Datasheet (PDF)
Shipping Charges:Click here for details
AI Image
Price (USD)
  
1: USD 0.8718 ea
Line Total: USD 0.87 
Availability : 1510
  
Ship by Wed. 24 Jun to Tue. 30 Jun
QtyUnit Price
1$ 0.8718
10$ 0.7706
30$ 0.5401
100$ 0.452
500$ 0.4306
1000$ 0.42
  

Availability1510
Ship by Wed. 24 Jun to Tue. 30 Jun
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 0.8718
10$ 0.7706
30$ 0.5401
100$ 0.452
500$ 0.4306
1000$ 0.42

   
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We are delighted to provide the Si7613DN-T1-GE3 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the Si7613DN-T1-GE3 and other electronic components in the MOSFETs category and beyond.

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The Si7613DN-T1-GE3 is a MOSFET (Metal Oxide Semiconductor Field-Effect Transistor) manufactured by Vishay. It has an operating voltage of 20V, a maximum continuous drain-source current of 35A, a maximum power dissipation of 52.1W, and a typical on-resistance of 8.7 mOhm when the gate voltage is at 10V. It is a N-Channel MOSFET, making it ideal for low-side switching applications.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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