New Product Si7615ADN Vishay Siliconix P-Channel 20-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Gen III P-Channel Power MOSFET V (V) R ( ) Max. I (A) Q (Typ.) DS DS(on) D g 100 % R and UIS Tested a 0.0044 at V = - 10 V g GS - 35 Material categorization: a 0.0060 at V = - 4.5 V - 20 59 nC GS - 35 For definitions of compliance please see a 0.0098 at V = - 2.5 V GS - 35 www.vishay.com/doc 99912 APPLICATIONS PowerPAK 1212-8 S Adaptor Switch S Battery Switch 3.3 mm 3.3 mm 1 S Load Switch 2 S G 3 G 4 D 8 D 7 D 6 D 5 D Bottom View Ordering Information: P-Channel MOSFET Si7615ADN-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) A Parameter Symbol LimitUnit Drain-Source Voltage V - 20 DS V Gate-Source Voltage V 12 GS a T = 25 C - 35 C a T = 70 C - 35 C Continuous Drain Current (T = 150 C) I J D b, c T = 25 C - 22.1 A b, c T = 70 C - 17.6 A A Pulsed Drain Current (t = 300 s) I - 80 DM a T = 25 C - 35 C Continuous Source-Drain Diode Current I S b, c T = 25 C - 3.3 A Avalanche Current I - 20 AS L = 0.1 mH Single Pulse Avalanche Energy E 20 mJ AS T = 25 C 52 C T = 70 C 33 C Maximum Power Dissipation P W D b, c T = 25 C 3.7 A b, c T = 70 C 2.4 A Operating Junction and Storage Temperature Range T , T - 55 to 150 J stg C d, e Soldering Recommendations (Peak Temperature) 260 THERMAL RESISTANCE RATINGS Parameter Symbol TypicalMaximumUnit b, f t 10 s R 26 33 Maximum Junction-to-Ambient thJA C/W Maximum Junction-to-Case (Drain) Steady State R 1.9 2.4 thJC Notes: a. Package limited. b. Surface mounted on 1 x 1 FR4 board. c. t = 10 s. d. See solder profile (www.vishay.com/doc 73257). The PowerPAK 1212-8 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components. f. Maximum under steady state conditions is 81 C/W. Document Number: 62667 For technical questions, contact: pmostechsupport vishay.com www.vishay.com S12-2733-Rev. B, 12-Nov-12 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000New Product Si7615ADN Vishay Siliconix SPECIFICATIONS (T = 25 C, unless otherwise noted) J Parameter Symbol Test Conditions Min. Typ.Max.Unit Static V V = 0 V, I = - 250 A Drain-Source Breakdown Voltage - 20 V DS GS D V Temperature Coefficient V /T - 14 DS DS J I = - 250 A mV/C D V Temperature Coefficient V /T 3 GS(th) GS(th) J V V = V , I = - 250 A Gate-Source Threshold Voltage - 0.4 - 1.5 V GS(th) DS GS D I V = 0 V, V = 12 V Gate-Source Leakage 100 nA GSS DS GS V = - 20 V, V = 0 V - 1 DS GS Zero Gate Voltage Drain Current I A DSS V = - 20 V, V = 0 V, T = 55 C - 10 DS GS J a I V - 5 V, V = - 10 V - 30 A On-State Drain Current D(on) DS GS V = - 10 V, I = - 20 A 0.0035 0.0044 GS D a R V = - 4.5 V, I = - 15 A 0.0047 0.0060 Drain-Source On-State Resistance DS(on) GS D V = - 2.5 V, I = - 10 A 0.0077 0.0098 GS D a g V = - 10 V, I = - 20 A 82 S Forward Transconductance fs DS D b Dynamic C Input Capacitance 5590 iss C V = - 10 V, V = 0 V, f = 1 MHz Output Capacitance 640 pF oss DS GS C Reverse Transfer Capacitance 655 rss V = - 10 V, V = - 10 V, I = - 10 A 122 183 DS GS D Q Total Gate Charge g 59 93 nC Q Gate-Source Charge V = - 10 V, V = - 4.5 V, I = - 10 A 9.1 gs DS GS D Gate-Drain Charge Q 14.2 gd R Gate Resistance f = 1 MHz 0.4 2.2 4 g Turn-On Delay Time t 41 70 d(on) t Rise Time V = - 10 V, R = 1 40 70 r DD L I - 10 A, V = - 4.5 V, R = 1 Turn-Off Delay Time t 75 130 D GEN g d(off) t Fall Time 26 50 f ns Turn-On Delay Time t 13 25 d(on) t Rise Time V = - 10 V, R = 1 12 24 r DD L I - 10 A, V = - 10 V, R = 1 t Turn-Off Delay Time D GEN g 85 150 d(off) t Fall Time 13 26 f Drain-Source Body Diode Characteristics I T = 25 C Continuous Source-Drain Diode Current - 35 S C A I Pulse Diode Forward Current - 80 SM V I = - 4 A, V = 0 V Body Diode Voltage - 0.72 - 1.1 V SD S GS Body Diode Reverse Recovery Time t 27 50 ns rr Q Body Diode Reverse Recovery Charge 11 20 nC rr I = - 10 A, dI/dt = 100 A/s, T = 25 C F J Reverse Recovery Fall Time t 10 a ns t Reverse Recovery Rise Time 17 b Notes: a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com For technical questions, contact: pmostechsupport vishay.com Document Number: 62667 2 S12-2733-Rev. B, 12-Nov-12 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000