X-On Electronics has gained recognition as a prominent supplier of SI7629DN-T1-GE3 MOSFETs across the USA, India, Europe, Australia, and various other global locations. SI7629DN-T1-GE3 MOSFETs are a product manufactured by Vishay. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

SI7629DN-T1-GE3 Vishay

SI7629DN-T1-GE3 electronic component of Vishay

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Part No.	SI7629DN-T1-GE3
Manufacturer:	Vishay
Category:	MOSFETs
Description:	MOSFET 20V 35A 52W MOSFET transistor in D2-Pak package; fast switching & low on resistance.
Datasheet:	SI7629DN-T1-GE3 Datasheet (PDF)
	Large This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

3000: USD 0.2583 ea
Line Total: USD 774.9

Availability - 0

MOQ: 3000 Multiples: 3000
Pack Size: 3000

SI7629DN-T1-GE3 More Buying Options & Price Grid(s)

Availability	Price	Buy Price	Quantity
0 Ship by Fri. 11 Jul to Thu. 17 Jul MOQ : 3000 Multiples : 3000	3000 : USD 0.8492 6000 : USD 0.8462 9000 : USD 0.843 12000 : USD 0.8399 15000 : USD 0.8366 24000 : USD 0.8334 30000 : USD 0.83 75000 : USD 0.8266 150000 : USD 0.8232

0 Ship by Fri. 11 Jul to Thu. 17 Jul MOQ : 3000 Multiples : 3000	3000 : USD 0.638

0 Ship by Fri. 11 Jul to Thu. 17 Jul MOQ : 1 Multiples : 1	1 : USD 1.4016 10 : USD 1.2093 100 : USD 0.9433 500 : USD 0.7792 1000 : USD 0.6152

0 Ship by Fri. 11 Jul to Thu. 17 Jul MOQ : 3000 Multiples : 3000	3000 : USD 0.2583 6000 : USD 0.2551 9000 : USD 0.252

0 Ship by Wed. 09 Jul to Fri. 11 Jul MOQ : 1 Multiples : 1	1 : USD 1.3684 10 : USD 0.9245 100 : USD 0.6794 500 : USD 0.5635 1000 : USD 0.4953 3000 : USD 0.4726 6000 : USD 0.4646

We are delighted to provide the SI7629DN-T1-GE3 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SI7629DN-T1-GE3 and other electronic components in the MOSFETs category and beyond.

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Additional Infomation About Product

? The SI7629DN-T1-GE3 part is a general purpose, low voltage, TRIAC driver optocoupler manufactured by Vishay. It is a 6-pin module that features a TTL and CMOS logic compatible input, a photo-emitter output coupled to a TRIAC and two isolated power supplies. The optocoupler has a high common mode transient immunity of 6kV/Î¼s, reduced crosstalk, and a wide operating temperature range between -40Â°C and 105Â°C. It is commonly used in electrical load switching applications, motor control, and automation.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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Manufacturer Vishay Vishay
Product Category MOSFETs MOSFETs
RoHS - XON Y Y
Id - Continuous Drain Current 35 A 35 A
Vds - Drain-Source Breakdown Voltage 20 V 20 V
Rds On - Drain-Source Resistance 3.8 mOhms 3.8 mOhms
Transistor Polarity P - Channel P - Channel
Vgs th - Gate-Source Threshold Voltage 1.5 V 1.5 V
Minimum Operating Temperature - 55 C - 55 C
Maximum Operating Temperature + 150 C + 150 C
Pd - Power Dissipation 52 W 52 W
Mounting Style Smd/Smt Smd/Smt
Package / Case POWERPAK 1212 - 8 POWERPAK 1212 - 8
Packaging Reel Reel
Technology Si Si
Number of Channels 1 Channel 1 Channel
Vgs - Gate-Source Voltage 12 V 12 V
Qg - Gate Charge 177 nC 177 nC
Channel Mode Enhancement Enhancement
Tradename Trenchfet Trenchfet
Configuration Single Single
Brand Vishay / Siliconix Vishay / Siliconix
Continuous Drain Current - 35 A - 35 A
Drain-Source Breakdown Voltage - 20 V - 20 V
Forward Transconductance - Min 64 S 64 S
Gate-Source Breakdown Voltage 12 V 12 V
Power Dissipation 52 W 52 W
Rds On 3.8 Mohms 3.8 Mohms
Gate Charge Qg 118 nC 118 nC
Factory Pack Quantity : 3000 3000
Height 1.04 mm 1.04 mm
Length 3.3 mm 3.3 mm
Series Si7 Si7
Transistor Type 1 P - Channel 1 P - Channel
Width 3.3 mm 3.3 mm
Cnhts 8541290000 8541290000
Fall Time 28 ns 28 ns
Hts Code 8541290095 8541290095
Mxhts 85412999 85412999
Product Type Mosfet Mosfet