Si4401BDY Vishay Siliconix P-Channel 40-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 V (V) R ()I (A) Q (Typ.) DS DS(on) D g Definition 0.014 at V = - 10 V - 10.5 GS TrenchFET Power MOSFET - 40 40 0.021 at V = - 4.5 V - 8.7 GS 100 % R Tested g Compliant to RoHS Directive 2002/95/EC SO-8 S 1 8 D S S D 2 7 S 3 6 D G G D 4 5 Top View D Ordering Information: Si4401BDY-T1-E3 (Lead (Pb)-free) Si4401BDY-T1-GE3 (Lead (Pb)-free and Halogen-free) P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS T = 25 C, unless otherwise noted A Parameter Symbol 10 s Steady State Unit V Drain-Source Voltage - 40 DS V V Gate-Source Voltage 20 GS T = 25 C - 10.5 - 8.7 A a I Continuous Drain Current (T = 150 C) D J T = 70 C - 8.3 - 5.9 A I Pulsed Drain Current - 50 A DM a I - 2.6 - 1.36 Continuous Source Current (Diode Conduction) S I Avalanche Current 30 AS L = 1 mH E Single Pulse Avalanche Energy 45 mJ AS T = 25 C 2.9 1.5 A a P W Maximum Power Dissipation D T = 70 C 1.85 0.95 A Operating Junction and Storage Temperature Range T , T - 55 to 150 C J stg THERMAL RESISTANCE RATINGS Parameter Symbol TypicalMaximumUnit t 10 s 36 43 a R Maximum Junction-to-Ambient thJA Steady State 70 84 C/W Maximum Junction-to-Foot (Drain) Steady State R 16 21 thJF Notes: a. Surface Mounted on 1 x 1 FR4 board. Document Number: 73140 www.vishay.com S09-0866-Rev. D, 18-May-09 1Si4401BDY Vishay Siliconix SPECIFICATIONS T = 25 C, unless otherwise noted J Parameter Symbol Test Conditions Min.Typ.Max.Unit Static V V = V , I = - 250 A Gate Threshold Voltage - 1.0 - 3.0 V GS(th) DS GS D I V = 0 V, V = 20 V Gate-Body Leakage 100 nA GSS DS GS V = - 40 V, V = 0 V - 1 DS GS I Zero Gate Voltage Drain Current A DSS V = - 40 V, V = 0 V, T = 70 C - 10 DS GS J a I V = - 5 V, V = - 10 V - 30 A On-State Drain Current D(on) DS GS V = - 10 V, I = - 10.5 A 0.011 0.014 GS D a R Drain-Source On-State Resistance DS(on) V = - 4.5 V, I = - 8.7 A 0.0165 0.021 GS D a g V = - 15 V, I = - 10.5 A 26 S Forward Transconductance fs DS D a V I = - 2.7 A, V = 0 V - 0.74 - 1.1 V Diode Forward Voltage SD S GS b Dynamic Total Gate Charge Q 40 55 g Q V = - 15 V, V = - 5 V, I = - 10.5 A Gate-Source Charge 10 nC gs DS GS D Gate-Drain Charge Q 14 gd R Gate Resistance 1.4 2.8 4.2 g Turn-On Delay Time t 16 25 d(on) t Rise Time V = - 15 V, R = 15 15 25 r DD L I - 1 A, V = - 10 V, R = 6 Turn-Off Delay Time t 97 150 ns D GEN g d(off) t Fall Time 47 75 f Source-Drain Reverse Recovery Time t I = - 2.1 A, dI/dt = 100 A/s 35 55 rr F Notes: a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. TYPICAL CHARACTERISTICS 25 C, unless otherwise noted 50 50 V = 10 V thru 4 V GS 40 40 30 30 20 20 T = 125 C C 10 10 3 V 25 C - 55 C 0 0 0 1234 5 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 V - Drain-to-Source Voltage (V) DS V - Gate-to-Source Voltage (V) GS Output Characteristics Transfer Characteristics www.vishay.com Document Number: 73140 2 S09-0866-Rev. D, 18-May-09 I - Drain Current (A) D I - Drain Current (A) D