SiB433EDK Vishay Siliconix P-Channel 20-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET V (V) R ()I (A) Q (Typ.) New Thermally Enhanced PowerPAK DS DS(on) D g SC-75 Package a 0.058 at V = - 4.5 V GS - 9 - Small Footprint Area a - 20 0.077 at V = - 2.5 V 7.6 nC - 9 GS - Low On-Resistance 0.105 at V = - 1.8 V 100 % R Tested - 5 GS g Typical ESD Performance 2000 V Built in ESD Protection with Zener Diode Material categorization: For definitions of compliance PowerPAK SC-75-6L-Single please see www.vishay.com/doc 99912 APPLICATIONS 1 D S Load Switch for Portable Devices 2 D Charger Switch for Portable 3 Devices G D 6 S D 5 G Marking Code R S 1.60 mm 1.60 mm 4 B L X Part code X X X Lot Traceability D and Date code Ordering Information: P-Channel MOSFET SiB433EDK-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) A Parameter Symbol LimitUnit Drain-Source Voltage V - 20 DS V Gate-Source Voltage V 8 GS a T = 25 C - 9 C a T = 70 C - 9 C Continuous Drain Current (T = 150 C) I J D b, c T = 25 C - 5.3 A b, c T = 70 C A - 4.3 A Pulsed Drain Current I - 20 DM a T = 25 C - 9 C Continuous Source-Drain Diode Current I S b, c T = 25 C - 2 A T = 25 C 13 C T = 70 C 8.4 C Maximum Power Dissipation P W D b, c T = 25 C 2.4 A b, c T = 70 C 1.6 A T , T Operating Junction and Storage Temperature Range - 55 to 150 J stg C d, e 260 Soldering Recommendations (Peak Temperature) THERMAL RESISTANCE RATINGS Parameter Symbol TypicalMaximumUnit b, f R t 5 s 41 51 Maximum Junction-to-Ambient thJA C/W R Maximum Junction-to-Case (Drain) Steady State 7.5 9.5 thJC Notes: a. Package limited. b. Surface mounted on 1 x 1 FR4 board. c. t = 5 s. d. See solder profile (www.vishay.com/doc 73257). The PowerPAK SC-75 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components. f. Maximum under steady state conditions is 105 C/W. Document Number: 65652 For technical support, please contact: pmostechsupport vishay.com www.vishay.com S12-0979-Rev. B, 30-Apr-12 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000SiB433EDK Vishay Siliconix SPECIFICATIONS (T = 25 C, unless otherwise noted) J Parameter Symbol Test Conditions Min.Typ.Max.Unit Static V V = 0 V, I = - 250 A Drain-Source Breakdown Voltage - 20 V DS GS D V Temperature Coefficient V /T - 13 DS DS J I = - 250 A mV/C D V Temperature Coefficient V /T 2.5 GS(th) GS(th) J V V = V , I = - 250 A Gate-Source Threshold Voltage - 0.4 - 1 V GS(th) DS GS D V = 0 V, V = 8 V 6 DS GS I Gate-Source Leakage GSS V = 0 V, V = 4.5 V 0.5 DS GS A V = - 20 V, V = 0 V - 1 DS GS I Zero Gate Voltage Drain Current DSS V = - 20 V, V = 0 V, T = 55 C - 10 DS GS J a I V - 5 V, V = - 4.5 V - 15 A On-State Drain Current D(on) DS GS V = - 4.5 V, I = - 3.7 A 0.047 0.058 GS D a R V = - 2.5 V, I = - 3.2 A 0.064 0.077 Drain-Source On-State Resistance DS(on) GS D V = - 1.8 V, I = - 1.5 A 0.085 0.105 GS D a g V = - 10 V, I = - 3.7 A 12 S Forward Transconductance fs DS D b Dynamic V = - 10 V, V = - 8 V, I = - 5.3 A 14 21 DS GS D Q Total Gate Charge g 7.6 12 nC Q Gate-Source Charge V = - 10 V, V = - 4.5 V, I = - 5.3 A 0.8 gs DS GS D Q Gate-Drain Charge 3.1 gd R Gate Resistance f = 1 MHz 0.4 2 4 k g t Turn-On Delay Time 0.2 0.3 d(on) t Rise Time V = - 10 V, R = 2.3 11.5 r DD L I - 4.3 A, V = - 4.5 V, R = 1 t Turn-Off Delay Time D GEN g 46 d(off) t Fall Time 23 f s Turn-On Delay Time t 0.09 0.14 d(on) t Rise Time V = - 10 V, R = 2.3 0.4 0.6 r DD L I - 4.3 A, V = - 8 V, R = 1 Turn-Off Delay Time t 5.2 7.8 D GEN g d(off) t Fall Time 2.3 3.5 f Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current I T = 25 C - 9 S C A I Pulse Diode Forward Current - 20 SM Body Diode Voltage V I = - 4.3 A, V = 0 V - 0.8 - 1.2 V SD S GS t Body Diode Reverse Recovery Time 30 60 ns rr Q Body Diode Reverse Recovery Charge 20 40 nC rr I = - 4.3 A, dI/dt = 100 A/s, T = 25 C F J t Reverse Recovery Fall Time 13 a ns t Reverse Recovery Rise Time 17 b Notes: a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com For technical support, please contact: pmostechsupport vishay.com Document Number: 65652 2 S12-0979-Rev. B, 30-Apr-12 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000