SiHG32N50D www.vishay.com Vishay Siliconix D Series Power MOSFET FEATURES PRODUCT SUMMARY Optimal Design V (V) at T max. 550 DS J - Low Area Specific On-Resistance R max. at 25 C ()V = 10 V 0.150 DS(on) GS - Low Input Capacitance (C ) iss Q max. (nC) 96 g - Reduced Capacitive Switching Losses Q (nC) 18 gs - High Body Diode Ruggedness Q (nC) 29 gd - Avalanche Energy Rated (U ) IS Configuration Single Optimal Efficiency and Operation - Low Cost TO-247AC - Simple Gate Drive Circuitry D - Low Figure-Of-Merit (FOM): R x Q on g - Fast Switching Material categorization: For definitions of compliance please see www.vishay.com/doc 99912 S G D APPLICATIONS G Consumer Electronics - Displays (LCD or Plasma TV S Server and Telecom Power Supplies N-Channel MOSFET - SMPS Industrial - Welding, Induction Heating, Motor Drives Battery Chargers ORDERING INFORMATION Package TO-247AC Lead (Pb)-free SiHG32N50D-E3 Lead (Pb)-free and Halogen-free SiHG32N50D-GE3 ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) C PARAMETER SYMBOLLIMITUNIT Drain-Source Voltage V 500 DS V Gate-Source Voltage 30 V GS Gate-Source Voltage AC (f > 1 Hz) 30 T = 25 C 30 C Continuous Drain Current (T = 150 C) V at 10 V I J GS D T = 100 C 19 A C a Pulsed Drain Current I 89 DM Linear Derating Factor 3.1 W/C b Single Pulse Avalanche Energy E 225 mJ AS Maximum Power Dissipation P 390 W D Operating Junction and Storage Temperature Range T , T - 55 to + 150 C J stg Drain-Source Voltage Slope T = 125 C 24 J dV/dt V/ns d Reverse Diode dV/dt 0.37 c Soldering Recommendations (Peak Temperature) for 10 s 300 C Notes a. Repetitive rating pulse width limited by maximum junction temperature. b. V = 50 V, starting T = 25 C, L = 2.3 mH, R = 25 , I = 14 A. DD J g AS c. 1.6 mm from case. d. I I , starting T = 25 C. SD D J S12-1458-Rev. A, 18-Jun-12 Document Number: 91515 1 For technical questions, contact: hvm vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000SiHG32N50D www.vishay.com Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOLTYP. MAX. UNIT Maximum Junction-to-Ambient R -40 thJA C/W Maximum Junction-to-Case (Drain) -0.32 R thJC SPECIFICATIONS (T = 25 C, unless otherwise noted) J PARAMETER SYMBOLTEST CONDITIONS MIN.TYP.MAX.UNIT Static Drain-Source Breakdown Voltage V V = 0 V, I = 250 A 500 - - V DS GS D V /T -0.6 - V Temperature Coefficient Reference to 25 C, I = 250 A V/C DS DS J D Gate Threshold Voltage (N) V V = V , I = 250 A 3.0 - 5.0 V GS(th) DS GS D Gate-Source Leakage I V = 30 V - - 100 nA GSS GS V = 500 V, V = 0 V - - 1 DS GS Zero Gate Voltage Drain Current I A DSS V = 400 V, V = 0 V, T = 125 C - - 10 DS GS J Drain-Source On-State Resistance R V = 10 V I = 16 A - 0.125 0.150 DS(on) GS D a Forward Transconductance g V = 50 V, I = 16 A - 11 - S fs DS D Dynamic Input Capacitance C - 2550 - iss V = 0 V, GS Output Capacitance C -V = 100 V, 225- oss DS f = 1 MHz Reverse Transfer Capacitance C -21- rss pF Effective Output Capacitance, Energy C - 190 - o(er) a Related V = 0 V, V = 0 V to 400 V GS DS Effective Output Capacitance, Time C - 279 - b o(tr) Related Total Gate Charge Q -64 96 g Gate-Source Charge Q -1V = 10 V I = 16 A, V = 400 V8- nC gs GS D DS Gate-Drain Charge Q -29- gd Turn-On Delay Time t -27 54 d(on) Rise Time t - 75 113 r V = 400 V, I = 16 A, DD D ns Turn-Off Delay Time t -5V = 10 V, R = 9.1 887 d(off) GS g Fall Time t -5583 f Gate Input Resistance R f = 1 MHz, open drain - 1.5 - g Drain-Source Body Diode Characteristics MOSFET symbol D Continuous Source-Drain Diode Current I -- 32 S showing the A G integral reverse Pulsed Diode Forward Current I - - 128 S SM p - n junction diode Diode Forward Voltage V T = 25 C, I = 16 A, V = 0 V - - 1.2 V SD J S GS Reverse Recovery Time t - 467 - ns rr T = 25 C, I = I = 16 A, J F S Reverse Recovery Charge Q -7 - C rr dI/dt = 100 A/s, V = 20 V R Reverse Recovery Current I -28 - A RRM Notes a. C is a fixed capacitance that gives the same energy as C while V is rising from 0 % to 80 % V . oss(er) oss DS DSS b. C is a fixed capacitance that gives the same charging time as C while V is rising from 0 % to 80 % V . oss(tr) oss DS DSS S12-1458-Rev. A, 18-Jun-12 Document Number: 91515 2 For technical questions, contact: hvm vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000