X-On Electronics has gained recognition as a prominent supplier of SIHP7N60E-BE3 MOSFETs across the USA, India, Europe, Australia, and various other global locations. SIHP7N60E-BE3 MOSFETs are a product manufactured by Vishay. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

SIHP7N60E-BE3 Vishay

SIHP7N60E-BE3 electronic component of Vishay
SIHP7N60E-BE3 Vishay
SIHP7N60E-BE3 MOSFETs
SIHP7N60E-BE3  Semiconductors

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See Product Specifications
Part No. SIHP7N60E-BE3
Manufacturer: Vishay
Category: MOSFETs
Description: MOSFET N-CHANNEL 600V
Datasheet: SIHP7N60E-BE3 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 2.45 ea
Line Total: USD 2.45 
Availability - 6327
Ship by Wed. 11 Jun to Fri. 13 Jun
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
6327
Ship by Wed. 11 Jun to Fri. 13 Jun
MOQ : 1
Multiples : 1
1 : USD 2.45
10 : USD 1.464
25 : USD 1.2535
100 : USD 1.0472
500 : USD 0.9878
1000 : USD 0.9658
2000 : USD 0.9636

   
Manufacturer
Product Category
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Hts Code
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We are delighted to provide the SIHP7N60E-BE3 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SIHP7N60E-BE3 and other electronic components in the MOSFETs category and beyond.

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SiHP7N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES D Low figure-of-merit (FOM) R x Q on g TO-220AB Low input capacitance (C ) iss Reduced switching and conduction losses Ultra low gate charge (Q ) g G Available Avalanche energy rated (UIS) Material categorization: for definitions of compliance S D please see www.vishay.com/doc 99912 G S APPLICATIONS N-Channel MOSFET Server and telecom power supplies Switch mode power supplies (SMPS) PRODUCT SUMMARY Power factor correction power supplies (PFC) V (V) at T max. 650 DS J Lighting R max. at 25 C ()V = 10 V 0.6 DS(on) GS - High-intensity discharge (HID) Q max. (nC) 40 g - Fluorescent ballast lighting Q (nC) 5 gs Industrial Q (nC) 9 gd - Welding Configuration Single - Induction heating - Motor drives - Battery chargers - Renewable energy - Solar (PV inverters) ORDERING INFORMATION Package TO-220AB Lead (Pb)-free SiHP7N60E-E3 SiHP7N60E-BE3 Lead (Pb)-free and halogen-free SiHP7N60E-GE3 ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) C PARAMETER SYMBOLLIMITUNIT Drain-source voltage 600 V DS Drain-source voltage T = - 25 C, I = 250 A 575 V C D Gate-source voltage V 30 GS T = 25 C 7 C Continuous drain current (T = 150 C) V at 10 V I J GS D T = 100 C 5 A C a Pulsed drain current I 18 DM Linear derating factor 0.63 W/C b Single pulse avalanche energy E 43 mJ AS Maximum power dissipation P 78 W D Operating junction and storage temperature range T , T -55 to +150 C J stg Drain-source voltage slope T = 125 C 70 J dV/dt V/ns d Reverse diode dV/dt 3 c Soldering recommendations (peak temperature) For 10 s 300 C Notes a. Repetitive rating pulse width limited by maximum junction temperature b. V = 50 V, starting T = 25 C, L = 13.8 mH, R = 25 , I = 2.5 A DD J g AS c. 1.6 mm from case d. I I , dI/dt = 100 A/s, starting T = 25 C SD D J S21-1104-Rev. D, 15-Nov-2021 Document Number: 91508 1 For technical questions, contact: hvm vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000SiHP7N60E www.vishay.com Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOLTYP. MAX. UNIT Maximum junction-to-ambient R -62 thJA C/W -1.6 Maximum junction-to-case (drain) R thJC SPECIFICATIONS (T = 25 C, unless otherwise noted) J PARAMETER SYMBOLTEST CONDITIONS MIN.TYP.MAX.UNIT Static Drain-source breakdown voltage V V = 0 V, I = 250 A 609 - - V DS GS D V /T -0.68 - V temperature coefficient Reference to 25 C, I = 1 mA V/C DS DS J D Gate-source threshold Voltage (N) V V = V , I = 250 A 2 - 4 V GS(th) DS GS D V = 20 V - - 100 nA GS Gate-source leakage I GSS V = 30 V - - 1 A GS V = 600 V, V = 0 V - - 1 DS GS Zero gate voltage drain current I A DSS V = 480 V, V = 0 V, T = 125 C - - 10 DS GS J Drain-source on-state resistance R V = 10 V I = 3.5 A - 0.5 0.6 DS(on) GS D Forward transconductance g V = 50 V, I = 3.5 A - 1.9 - S fs DS D Dynamic Input capacitance C - 680 - iss V = 0 V, GS Output capacitance C -3V = 100 V, 9- oss DS f = 1 MHz Reverse transfer capacitance C -5- rss pF Effective output capacitance, energy C -34 - a o(er) related V = 0 V to 480 V, V = 0 V DS GS Effective output capacitance, time C - 100 - o(tr) b related Total gate charge Q -20 40 g Gate-source charge Q -5V = 10 V I = 3.5 A, V = 480 V- nC gs GS D DS Gate-drain charge Q -9- gd Turn-on delay time t -13 26 d(on) Rise time t -13 26 r V = 480 V, I = 3.5 A, DD D ns V = 10 V, R = 9.1 Turn-off delay time t -2GS g 448 d(off) Fall time t -1428 f Gate input resistance R f = 1 MHz, open drain - 1.1 - g Drain-Source Body Diode Characteristics MOSFET symbol D Continuous source-drain diode current I -- 7 S showing the A integral reverse G p - n junction diode Pulsed diode forward current I -- 18 S SM Diode forward voltage V T = 25 C, I = 3.5 A, V = 0 V - - 1.2 V SD J S GS Reverse recovery time t - 230 - ns rr T = 25 C, I = I = 3.5 A, J F S Reverse recovery charge Q -1.9 - C rr dI/dt = 100 A/s, V = 20 V R Reverse recovery current I -14 - A RRM Notes a. C is a fixed capacitance that gives the same energy as C while V is rising from 0 % to 80 % V oss(er) oss DS DSS b. C is a fixed capacitance that gives the same charging time as C while V is rising from 0 % to 80 % V oss(tr) oss DS DSS S21-1104-Rev. D, 15-Nov-2021 Document Number: 91508 2 For technical questions, contact: hvm vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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