SiHP7N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES D Low figure-of-merit (FOM) R x Q on g TO-220AB Low input capacitance (C ) iss Reduced switching and conduction losses Ultra low gate charge (Q ) g G Available Avalanche energy rated (UIS) Material categorization: for definitions of compliance S D please see www.vishay.com/doc 99912 G S APPLICATIONS N-Channel MOSFET Server and telecom power supplies Switch mode power supplies (SMPS) PRODUCT SUMMARY Power factor correction power supplies (PFC) V (V) at T max. 650 DS J Lighting R max. at 25 C ()V = 10 V 0.6 DS(on) GS - High-intensity discharge (HID) Q max. (nC) 40 g - Fluorescent ballast lighting Q (nC) 5 gs Industrial Q (nC) 9 gd - Welding Configuration Single - Induction heating - Motor drives - Battery chargers - Renewable energy - Solar (PV inverters) ORDERING INFORMATION Package TO-220AB Lead (Pb)-free SiHP7N60E-E3 SiHP7N60E-BE3 Lead (Pb)-free and halogen-free SiHP7N60E-GE3 ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) C PARAMETER SYMBOLLIMITUNIT Drain-source voltage 600 V DS Drain-source voltage T = - 25 C, I = 250 A 575 V C D Gate-source voltage V 30 GS T = 25 C 7 C Continuous drain current (T = 150 C) V at 10 V I J GS D T = 100 C 5 A C a Pulsed drain current I 18 DM Linear derating factor 0.63 W/C b Single pulse avalanche energy E 43 mJ AS Maximum power dissipation P 78 W D Operating junction and storage temperature range T , T -55 to +150 C J stg Drain-source voltage slope T = 125 C 70 J dV/dt V/ns d Reverse diode dV/dt 3 c Soldering recommendations (peak temperature) For 10 s 300 C Notes a. Repetitive rating pulse width limited by maximum junction temperature b. V = 50 V, starting T = 25 C, L = 13.8 mH, R = 25 , I = 2.5 A DD J g AS c. 1.6 mm from case d. I I , dI/dt = 100 A/s, starting T = 25 C SD D J S21-1104-Rev. D, 15-Nov-2021 Document Number: 91508 1 For technical questions, contact: hvm vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000SiHP7N60E www.vishay.com Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOLTYP. MAX. UNIT Maximum junction-to-ambient R -62 thJA C/W -1.6 Maximum junction-to-case (drain) R thJC SPECIFICATIONS (T = 25 C, unless otherwise noted) J PARAMETER SYMBOLTEST CONDITIONS MIN.TYP.MAX.UNIT Static Drain-source breakdown voltage V V = 0 V, I = 250 A 609 - - V DS GS D V /T -0.68 - V temperature coefficient Reference to 25 C, I = 1 mA V/C DS DS J D Gate-source threshold Voltage (N) V V = V , I = 250 A 2 - 4 V GS(th) DS GS D V = 20 V - - 100 nA GS Gate-source leakage I GSS V = 30 V - - 1 A GS V = 600 V, V = 0 V - - 1 DS GS Zero gate voltage drain current I A DSS V = 480 V, V = 0 V, T = 125 C - - 10 DS GS J Drain-source on-state resistance R V = 10 V I = 3.5 A - 0.5 0.6 DS(on) GS D Forward transconductance g V = 50 V, I = 3.5 A - 1.9 - S fs DS D Dynamic Input capacitance C - 680 - iss V = 0 V, GS Output capacitance C -3V = 100 V, 9- oss DS f = 1 MHz Reverse transfer capacitance C -5- rss pF Effective output capacitance, energy C -34 - a o(er) related V = 0 V to 480 V, V = 0 V DS GS Effective output capacitance, time C - 100 - o(tr) b related Total gate charge Q -20 40 g Gate-source charge Q -5V = 10 V I = 3.5 A, V = 480 V- nC gs GS D DS Gate-drain charge Q -9- gd Turn-on delay time t -13 26 d(on) Rise time t -13 26 r V = 480 V, I = 3.5 A, DD D ns V = 10 V, R = 9.1 Turn-off delay time t -2GS g 448 d(off) Fall time t -1428 f Gate input resistance R f = 1 MHz, open drain - 1.1 - g Drain-Source Body Diode Characteristics MOSFET symbol D Continuous source-drain diode current I -- 7 S showing the A integral reverse G p - n junction diode Pulsed diode forward current I -- 18 S SM Diode forward voltage V T = 25 C, I = 3.5 A, V = 0 V - - 1.2 V SD J S GS Reverse recovery time t - 230 - ns rr T = 25 C, I = I = 3.5 A, J F S Reverse recovery charge Q -1.9 - C rr dI/dt = 100 A/s, V = 20 V R Reverse recovery current I -14 - A RRM Notes a. C is a fixed capacitance that gives the same energy as C while V is rising from 0 % to 80 % V oss(er) oss DS DSS b. C is a fixed capacitance that gives the same charging time as C while V is rising from 0 % to 80 % V oss(tr) oss DS DSS S21-1104-Rev. D, 15-Nov-2021 Document Number: 91508 2 For technical questions, contact: hvm vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000