Product Information

SIUD406ED-T1-GE3

SIUD406ED-T1-GE3 electronic component of Vishay

Datasheet
MOSFET 30V Vds; 8V Vgs PowerPAK 0806

Manufacturer: Vishay
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.4174 ea
Line Total: USD 0.42

12301 - Global Stock
Ships to you between
Fri. 24 May to Tue. 28 May
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
12193 - WHS 1


Ships to you between Fri. 24 May to Tue. 28 May

MOQ : 1
Multiples : 1
1 : USD 0.4174
10 : USD 0.2749
100 : USD 0.1346
1000 : USD 0.1081
3000 : USD 0.0932
9000 : USD 0.0862
24000 : USD 0.0816
45000 : USD 0.0782
99000 : USD 0.0759

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Tradename
Configuration
Series
Transistor Type
Brand
Forward Transconductance - Min
Fall Time
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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0.8 mm0.8 mm SiUD406ED www.vishay.com Vishay Siliconix N-Channel 30 V (D-S) MOSFET FEATURES PowerPAK 0806 Single D TrenchFET power MOSFET 3 Ultra small 0.8 mm x 0.6 mm outline Ultra thin 0.4 mm max. height Typical ESD protection 1000 V (HBM) 100 % R tested g 1 Material categorization: for definitions of G 2 11 compliance please see www.vishay.com/doc 99912 S Top View Bottom View APPLICATIONS D Marking code: J Load switch High speed switching PRODUCT SUMMARY DC/DC converters V (V) 30 G DS max. ( ) at V = 4.5 V 1.46 R DS(on) GS Battery-operated and mobile devices R max. ( ) at V = 2.5 V 1.66 DS(on) GS R max. ( ) at V = 1.8 V 1.85 DS(on) GS Q typ. (nC) 0.4 g S a, f I (A) 0.5 N-Channel MOSFET D Configuration Single ORDERING INFORMATION Package PowerPAK 0806 Lead (Pb)-free and halogen-free SiUD406ED-T1-GE3 Note The lead finish is NiPdAu and classed as E4 finish ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) A PARAMETER SYMBOL LIMIT UNIT Drain-source voltage V 30 DS V Gate-source voltage V 8 GS a, f T = 25 C 0.5 A a T = 70 C 0.5 A Continuous drain current /T = 150 C) I J D b T = 25 C 0.37 A b T = 70 C 0.29 A A Pulsed drain current (t = 100 s) I 0.8 DM a, f T = 25 C 0.5 A Continuous source-drain diode current I S b T = 25 C 0.31 A a T = 25 C 1.25 A a T = 70 C 0.8 A Maximum power dissipation P W D b T = 25 C 0.37 A b T = 70 C 0.24 A Operating junction and storage temperature range T , T -55 to +150 J stg C c Soldering recommendations (peak temperature) 260 THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYPICAL MAXIMUM UNIT a, d Maximum junction-to-ambient t 5 s R 80 100 thJA C/W b, e Maximum junction-to-ambient t 5 s R 265 335 thJA Notes a. Surface mounted on 1 x 1 FR4 board with full copper, t = 5 s b. Surface mounted on 1 x 1 FR4 board with minimum copper, t = 5 s c. Refer to IPC / JEDEC (J-STD-020), no manual or hand soldering d. Maximum under steady state conditions is 135 C/W e. Maximum under steady state conditions is 400 C/W f. Package limited S20-0847-Rev. B, 26-Oct-2020 Document Number: 75906 1 For technical questions, contact: pmostechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 0.6 mm6mm 0.4 mm SiUD406ED www.vishay.com Vishay Siliconix SPECIFICATIONS (T = 25 C, unless otherwise noted) J PARAMETER SYMBOL TEST CONDITIONS MIN.TYP.MAX.UNIT Static Drain-source breakdown voltage V V = 0 V, I = 250 A 30 - - V DS GS D V temperature coefficient V /T -28 - DS DS J I = 250 A mV/C D V temperature coefficient V /T --1.5- GS(th) GS(th) J Gate-source threshold voltage V V = V , I = 250 A 0.4 - 1.1 V GS(th) DS GS D V = 0 V, V = 4.5 V - - 0.5 DS GS Gate-source leakage I GSS V = 0 V, V = 8 V - - 10 DS GS A V = 30 V, V = 0 V - - 1 DS GS Zero gate voltage drain current I DSS V = 30 V, V = 0 V, T = 55 C - - 10 DS GS J a On-state drain current I V 5 V, V = 4.5 V 0.5 - - A D(on) DS GS V = 4.5 V, I = 0.2 A - 1.17 1.46 GS D a Drain-source on-state resistance R V = 2.5 V, I = 0.1 A - 1.24 1.66 DS(on) GS D V = 1.8 V, I = 0.1 A - 1.37 1.85 GS D a Forward transconductance g V = 5 V, I = 0.4 A - 1.2 - S fs DS D b Dynamic Input capacitance C -17 - iss Output capacitance C V = 15 V, V = 0 V, f = 1 MHz -5 - pF oss DS GS Reverse transfer capacitance C -2.5 - rss V = 15 V, V = 4.5 V, I = 0.2 A Total gate charge Q -0.4 0.6 g DS GS D nC Gate-source charge Q -0.04- gs V = 15 V, V = 4.5 V, I = 0.2 A DS GS D Gate-drain charge Q -0.1 - gd Gate resistance R f = 1 MHz 3 15 30 g Turn-on delay time t -5 10 d(on) Rise time t -5 10 r V = 15 V, R = 75 , I 0.2 A, DD L D = 4.5 V, R = 1 V Turn-off delay time t GEN g -20 40 d(off) Fall time t -5 10 f ns Turn-on delay time t -5 10 d(on) Rise time t -5 10 r V = 15 V, R = 75 , I 0.2 A, DD L D V = 8 V, R = 1 Turn-off delay time t GEN g -7 15 d(off) Fall time t -5 10 f Drain-Source Body Diode Characteristics c Continuous source-drain diode current I T = 25 C -- 0.5 A S A Pulse diode forward current I -- 0.8 SM Body diode voltage V I = 0.2 A, V = 0 V - 0.88 1.2 V SD S GS Body diode reverse recovery time t -10 20 ns rr Body diode reverse recovery charge Q -3 6 nC I = 0.2 A, di/dt = 100 A/s, rr F T = 25 C J Reverse recovery fall time t -5 - a ns Reverse recovery rise time t -5 - b Notes a. Pulse test pulse width 300 s, duty cycle 2 % b. Guaranteed by design, not subject to production testing c. Surface mounted on 1 x 1 FR4 board with full copper, t = 5 s Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S20-0847-Rev. B, 26-Oct-2020 Document Number: 75906 2 For technical questions, contact: pmostechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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