SQ3426AEEV www.vishay.com Vishay Siliconix Automotive N-Channel 60 V (D-S) 175 C MOSFET FEATURES TSOP-6 Single S TrenchFET power MOSFET 4 D Typical ESD protection 800 V HBM 5 D AEC-Q101 qualified 6 100 % R and UIS tested g Material categorization: for definitions of compliance please see 3 G www.vishay.com/doc 99912 2 D 1 (1, 2, 5, 6) D D Top View PRODUCT SUMMARY (3) G V (V) 60 DS R () at V = 10 V 0.042 DS(on) GS R () at V = 4.5 V 0.063 DS(on) GS I (A) 7 D (4) S Configuration Single N-Channel MOSFET Marking Code: 8Nxxx ORDERING INFORMATION Package TSOP-6 SQ3426AEEV Lead (Pb)-free and halogen-free (for detailed order number please see www.vishay.com/doc 79771) ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) C PARAMETER SYMBOLLIMITUNIT Drain-Source Voltage V 60 DS V Gate-Source Voltage V 20 GS T = 25 C 7 C Continuous Drain Current I D T = 125 C 4 C Continuous Source Current (Diode Conduction) I 6 A S a Pulsed Drain Current I 29 DM Single Pulse Avalanche Current I 10 AS L = 0.1 mH Single Pulse Avalanche Energy E 5mJ AS T = 25 C 5 C a Maximum Power Dissipation P W D T = 125 C 1.6 C Operating Junction and Storage Temperature Range T , T - 55 to +175 C J stg THERMAL RESISTANCE RATINGS PARAMETER SYMBOLLIMITUNIT b Junction-to-Ambient PCB Mount R 110 thJA C/W Junction-to-Foot (Drain) R 30 thJF Notes a. Pulse test pulse width 300 s, duty cycle 2 % b. When mounted on 1 square PCB (FR4 material) S21-1246-Rev. C, 10-Jan-2022 Document Number: 62982 1 For technical questions, contact: automostechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000SQ3426AEEV www.vishay.com Vishay Siliconix SPECIFICATIONS (T = 25 C, unless otherwise noted) C PARAMETER SYMBOLTEST CONDITIONS MIN.TYP.MAX.UNIT Static Drain-Source Breakdown Voltage V V = 0, I = 250 A 60 - - DS GS D V Gate-Source Threshold Voltage V V = V , I = 250 A 1.5 2 2.5 GS(th) DS GS D V = 0 V, V = 12 V - - 500 nA DS GS Gate-Source Leakage I GSS V = 0 V, V = 20 V - - 1 mA DS GS V = 0 V V = 60 V - - 1 GS DS Zero Gate Voltage Drain Current I V = 0 V V = 60 V, T = 125 C - - 50 A DSS GS DS J V = 0 V V = 60 V, T = 175 C - - 150 GS DS J a On-State Drain Current I V = 10 V V 5 V 10 - - A D(on) GS DS V = 10 V I = 5 A - 0.032 0.042 GS D V = 10 V I = 5 A, T = 125 C - 0.056 - GS D J a Drain-Source On-State Resistance R DS(on) V = 10 V I = 5 A, T = 175 C - 0.071 - GS D J V = 4.5 V I = 4 A - 0.035 0.063 GS D a Forward Transconductance g V = 15 V, I = 4 A - 21 - S fs DS D b Dynamic Input Capacitance C - 800 1100 iss Output Capacitance C -7V = 0 V V = 30 V, f = 1 MHz5100 pF oss GS DS Reverse Transfer Capacitance C -3555 rss c Total Gate Charge Q -11.5 14 g c Gate-Source Charge Q -1V = 10 V V = 30 V, I = 6 A.9- nC gs GS DS D c Gate-Drain Charge Q -3.5- gd Gate Resistance R f = 1 MHz 1.9 3.8 5.7 g c Turn-On Delay Time t -7 10 d(on) c Rise Time t -10 14 r V = 30 V, R = 7.5 DD L ns c I 4 A, V = 10 V, R = 1 Turn-Off Delay Time t -2D GEN g025 d(off) c Fall Time t -46 f b Source-Drain Diode Ratings and Characteristics a Pulsed Current I -- 29 A SM Forward Voltage V I = 1.6 A, V = 0 - 0.75 1.2 V SD F GS Notes a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S21-1246-Rev. C, 10-Jan-2022 Document Number: 62982 2 For technical questions, contact: automostechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000