SQM70060EL www.vishay.com Vishay Siliconix Automotive N-Channel 100 V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY TrenchFET power MOSFET V (V) 100 DS Package with low thermal resistance R ( ) at V = 10 V 0.0059 DS(on) GS AEC-Q101 qualified R ( ) at V = 4.5 V 0.0080 DS(on) GS I (A) 75 100 % R and UIS tested g D Configuration Single Material categorization: Package TO-263 for definitions of compliance please see www.vishay.com/doc 99912 D TO-263 G SS DD GG S Top View N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) C PARAMETER SYMBOLLIMITUNIT Drain-Source Voltage V 100 DS V Gate-Source Voltage V 20 GS a T = 25 C 75 C Continuous Drain Current I D T = 125 C 67 C a Continuous Source Current (Diode Conduction) I 75 A S b Pulsed Drain Current I 180 DM Single Pulse Avalanche Current I 60 AS L = 0.1 mH Single Pulse Avalanche Energy E 180 mJ AS T = 25 C 166 C b Maximum Power Dissipation P W D T = 125 C 55 C Operating Junction and Storage Temperature Range T , T -55 to +175 C J stg THERMAL RESISTANCE RATINGS PARAMETER SYMBOLLIMITUNIT c Junction-to-Ambient PCB mount R 40 thJA C/W Junction-to-Case (Drain) R 0.9 thJC Notes a. Package limited. b. Pulse test pulse width 300 s, duty cycle 2 %. c. When mounted on 1 square PCB (FR4 material). S16-0653-Rev. A, 18-Apr-16 Document Number: 67764 1 For technical questions, contact: automostechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000SQM70060EL www.vishay.com Vishay Siliconix SPECIFICATIONS (T = 25 C, unless otherwise noted) C PARAMETER SYMBOLTEST CONDITIONS MIN.TYP.MAX.UNIT Static Drain-Source Breakdown Voltage V V = 0, I = 250 A 100 - - DS GS D V Gate-Source Threshold Voltage V V = V , I = 250 A 1.5 2.0 2.5 GS(th) DS GS D Gate-Source Leakage I V = 0 V, V = 20 V - - 100 nA GSS DS GS V = 0 V V = 100 V - - 1 GS DS Zero Gate Voltage Drain Current I V = 0 V V = 100 V, T = 125 C - - 50 A DSS GS DS J V = 0 V V = 100 V, T = 175 C - - 500 GS DS J a On-State Drain Current I V = 10 V V 5 V 50 - - A D(on) GS DS V = 10 V I = 30 A - 0.0046 0.0059 GS D V = 10 V I = 30 A, T = 125 C - - 0.0099 GS D J a Drain-Source On-State Resistance R DS(on) V = 10 V I = 30 A, T = 175 C - - 0.0123 GS D J V = 4.5 V I = 20 A - 0.0056 0.0080 GS D b Forward Transconductance g V = 15 V, I = 25 A - 95 - S fs DS D b Dynamic Input Capacitance C - 4170 5500 iss Output Capacitance C -V = 0 V V = 25 V, f = 1 MHz19352600 pF oss GS DS Reverse Transfer Capacitance C -160220 rss c Total Gate Charge Q -66 100 g c Gate-Source Charge Q -1V = 10 V V = 50 V, I = 50 A4- nC gs GS DS D c Gate-Drain Charge Q -12- gd Gate Resistance R f = 1 MHz 0.90 1.92 3 g c Turn-On Delay Time t -13 25 d(on) c Rise Time t -21 35 r V = 50 V, R = 1.08 DD L ns c I 50 A, V = 10 V, R = 1 Turn-Off Delay Time t -3D GEN g460 d(off) c Fall Time t -1325 f b Source-Drain Diode Ratings and Characteristics a Pulsed Current I -- 180 A SM Forward Voltage V I = 50 A, V = 0 - 0.90 1.5 V SD F GS Notes a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S16-0653-Rev. A, 18-Apr-16 Document Number: 67764 2 For technical questions, contact: automostechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000