MDS5652 Dual N-Channel Trench MOSFET, 30V, 7.5A, 22m MDS5652 Dual N-Channel Trench MOSFET, 30V, 7.5A, 22m General Description Features The MDS5652 uses advanced MagnaChips MOSFET V = 30V DS Technology, which provides low on-state resistance, high I = 7.5A V = 10V D GS switching performance and exellent reliability. R DS(ON) < 22m V = 10V GS < 35m V = 4.5V GS Applications Portable Equipment Applications DC-DC Converter applications General purpose applications D1 D2 5(D ) 2 6(D ) 2 7(D ) 1 8(D ) 1 4(G ) 2 G1 G2 3(S ) 2 2(G ) 1 1(S ) 1 S1 S2 o Absolute Maximum Ratings (T =25 C unless otherwise noted) a Characteristics Symbol Rating Unit Drain-Source Voltage V 30 V DSS Gate-Source Voltage V 20 V GSS o T =25 C 7.5 A a Continuous Drain Current I D o T =100 C 4.8 A a Pulsed Drain Current I 30 A DM o T =25 C 2.0 a (1) Power Dissipation P W D o T =100 C 0.8 a (2) Single Pulse Avalanche Energy E 12 mJ AS o Junction and Storage Temperature Range T , T -55~+150 C J stg Thermal Characteristics Characteristics Symbol Rating Unit (1) Thermal Resistance, Junction-to-Ambient(Steady-State) R 62.5 JA o C/W Thermal Resistance, Junction-to-Case R 50 JC March. 2009. Version 0.0 1 MagnaChip Semiconductor Ltd. MDS5652 Dual N-Channel Trench MOSFET, 30V, 7.5A, 22m Ordering Information Part Number Temp. Range Package Packing RoHS Status o MDS5652URH -55~150 C SOIC-8 Tape & Reel Halogen Free o Electrical Characteristics (T =25 C unless otherwise noted) J Characteristics Symbol Test Condition Min Typ Max Unit Static Characteristics Drain-Source Breakdown Voltage BV I = 250A, V = 0V 30 - - V DSS D GS Zero Gate Voltage Drain Current I V = 24V, V = 0V 1 A DSS DS GS Gate to Source Leakage Current I V = 20V, V = 0V - - 100 GSS GS DS Gate to Source Threshold Voltage V V = V , I = 250A 1 1.9 3 V GS(th) DS GS D V = 10V, I = 7.5A - 16 22 GS D Static Drain to Source On Resistance R m DS(ON) V = 4.5V, I = 5.0A 23 35 GS D Forward Transconductance g V = 5V, I = 7.5A 25 - S FS DS D Dynamic Characteristics Total Gate Charge Q - 11.7 - g(10V) Total Gate Charge Q 6.1 g(4.5V) V = 30V, I = 7.5A, DD D nC V = 10V GS Gate to Source Charge Q - 2.1 - gs Gate to Drain Charge Q - 3.2 - gd Input Capacitance C - 460 - iss V = 30V, V = 0V, DS GS Reverse Transfer Capacitance C - 58 - pF rss f = 1.0MHz Output Capacitance C - 154 - oss Turn-On Delay Time t - 3.8 - d(on) Turn-On Rise Time t - 24.6 - r V = 10V ,V = 15V, GS DD ns R = 2.1, R = 3 L GEN Turn-Off Delay Time t - 17.4 - d(off) Turn-Off Fall Time t - 10.6 - f Drain-Source Body Diode Characteristics Source-Drain Diode Forward Voltage V I = 1A, V = 0V - 0.75 V SD S GS Body Diode Reverse Recovery Time t - 16 - ns rr I = 7.5A, di/dt = 100A/s F Body Diode Reverse Recovery Charge Q - 7.5 - nC rr Note : 1. Surface mounted FR-4 board with 2oz. Copper. 2. Starting TJ = 25C, L = 1mH, IAS = 5A, VDD = 15V, VGS = 10V March. 2009. Version 0.0 2 MagnaChip Semiconductor Ltd.