X-On Electronics has gained recognition as a prominent supplier of MDS1654URH MOSFETs across the USA, India, Europe, Australia, and various other global locations. MDS1654URH MOSFETs are a product manufactured by Magnachip. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

MDS1654URH Magnachip

MDS1654URH electronic component of Magnachip
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See Product Specifications
Part No.MDS1654URH
Manufacturer: Magnachip
Category: MOSFETs
Description: Trans MOSFET N-CH 30V 15A 8-Pin SOIC T/R
Datasheet: MDS1654URH Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
3000: USD 0.1023 ea
Line Total: USD 306.9 
Availability - 0
MOQ: 3000  Multiples: 3000
Pack Size: 3000
Availability Price Quantity
0
Ship by Thu. 07 Nov to Wed. 13 Nov
MOQ : 3000
Multiples : 3000
3000 : USD 0.1023

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Transistor Polarity
Pd - Power Dissipation
Mounting Style
Packaging
Channel Mode
Brand
Pin Count
Operating Temp Range
Number Of Elements
Operating Temperature Classification
Gate-Source Voltage Max
Rad Hardened
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We are delighted to provide the MDS1654URH from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the MDS1654URH and other electronic components in the MOSFETs category and beyond.

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MDS1654 Single N-channel Trench MOSFET 30V MDS1654 Single N-Channel Trench MOSFET 30V, 15A, 9.5m General Description Features The MDS1654 uses advanced MagnaChips MOSFET V = 30V DS Technology, which provides low on-state resistance, I = 15A V = 10V D GS high switching performance and excellent reliability. R DS(ON) < 9.5m V = 10V GS MDS1654 is suitable device for DC-DC Converters < 13.0m V = 4.5V GS and general purpose applications. Applications DC-DC Converters 5(D) D 6(D) 7(D) 8(D) G 4(G) 3(S) 2(S) 1(S) S o Absolute Maximum Ratings (Ta = 25 C) Characteristics Symbol Rating Unit Drain-Source Voltage V 30 V DSS Gate-Source Voltage V 20 V GSS o T =25 C 15 A a Continuous Drain Current I D o T =100C 10.5 A a Pulsed Drain Current I 60 A DM o T =25 C 2.5 a (1) Power Dissipation P W D o T =100C 1.25 a (2) Single Pulse Avalanche Energy E 98 mJ AS o Junction and Storage Temperature Range T , T -55~150 C J stg Thermal Characteristics Characteristics Symbol Rating Unit (1) Thermal Resistance, Junction-to-Ambient R 50 JA o C/W Thermal Resistance, Junction-to-Case R 25 JC 1 Feb. 2011. Version 1.1 MagnaChip Semiconductor Ltd. MDS1654 Single N-channel Trench MOSFET 30V Ordering Information Part Number Temp. Range Package Packing ROHS Status o MDS1654URH -55~150 C SOIC-8 Tape & Reel Halogen Free o Electrical Characteristics (Ta =25 C) Characteristics Symbol Test Condition Min Typ Max Unit Static Characteristics Drain-Source Breakdown Voltage BV I = 250 A, V = 0V 30 - - DSS D GS V Gate Threshold Voltage V V = V , I = 250 A 1.0 1.9 3.0 GS(th) DS GS D Drain Cut-Off Current I V = 30V, V = 0V - - 1 DSS DS GS A Gate Leakage Current I V = 20V, V = 0V - - 0.1 GSS GS DS V = 10V, I = 15A - 7.1 9.5 GS D Drain-Source ON Resistance R m DS(ON) V = 4.5V, I = 12A - 9.4 13.0 GS D Forward Transconductance g V = 5V, I = 15A - 19 - S fs DS D Dynamic Characteristics Total Gate Charge Q 13.7 - g(10V) Total Gate Charge Q 6.8 - g(4.5V) V = 15V, I = 15A, DS D nC V = 10V GS Gate-Source Charge Q - 2.0 - gs Gate-Drain Charge Q - 3.5 - gd Input Capacitance C - 1396 iss V = 15V, V = 0V, DS GS Reverse Transfer Capacitance C - 156 pF rss f = 1.0MHz Output Capacitance C - 272 oss Turn-On Delay Time t - 8.4 - d(on) Rise Time t - 24.6 - r V = 10V, V = 15V, GS DS ns R = 3 , R = 3 L G Turn-Off Delay Time t - 33 - d(off) Fall Time t - 13.6 - f Drain-Source Body Diode Characteristics Source-Drain Diode Forward Voltage V I = 1A, V = 0V - 0.7 1.0 V SD S GS Body Diode Reverse Recovery Time t - 19 21 ns rr I = 15A, dl/dt = 100A/s F Body Diode Reverse Recovery Charge Q - 9 12 nC rr Note : 1. Surface mounted FR-4 board with 2oz. Copper. 2. Starting T = 25C, L = 1mH, I = 14A, V = 15V, V = 10V. J AS DD GS 2 Feb. 2011. Version 1.1 MagnaChip Semiconductor Ltd.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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