X-On Electronics has gained recognition as a prominent supplier of MDS5951URH MOSFETs across the USA, India, Europe, Australia, and various other global locations. MDS5951URH MOSFETs are a product manufactured by Magnachip. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

MDS5951URH Magnachip

MDS5951URH electronic component of Magnachip
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See Product Specifications
Part No.MDS5951URH
Manufacturer: Magnachip
Category: MOSFETs
Description: Trans MOSFET N-CH 60V 4.5A 8-Pin SOIC T/R
Datasheet: MDS5951URH Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1116: USD 0.0309 ea
Line Total: USD 34.48 
Availability - 0
MOQ: 1116  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Thu. 07 Nov to Wed. 13 Nov
MOQ : 1116
Multiples : 1
1116 : USD 0.0309

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Transistor Polarity
Pd - Power Dissipation
Mounting Style
Packaging
Channel Mode
Brand
Operating Temperature Classification
Operating Temp Range
Drain-Source On-Volt
Gate-Source Voltage Max
Number Of Elements
Rad Hardened
Package Type
Type
Pin Count
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the MDS5951URH from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the MDS5951URH and other electronic components in the MOSFETs category and beyond.

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MDS5951 Dual N-Channel Trench MOSFET MDS5951 Dual N-Channel Trench MOSFET 60V, 4.5A, 50m General Description Features V = 60V The MDS5951 uses advanced Magnachips DS I = 4.5A V = 10V D GS MOSFET Technology, which provides low on-state RDS(ON) resistance, high switching performance and < 50m V = 10V GS excellent reliability. < 60m V = 4.5V GS Applications Inverters General purpose applications 5(D ) D1 D2 2 6(D ) 2 7(D ) 1 8(D ) 1 G1 G2 4(G ) 2 3(S ) 2 2(G ) 1 S1 S2 1(S ) 1 o Absolute Maximum Ratings (T =25 C unless otherwise noted) A Characteristics Symbol Rating Unit Drain-Source Voltage V 60 V DSS Gate-Source Voltage V 20 V GSS o T =25 C 4.5 A A Continuous Drain Current (Note 4) I D o T =70 C 3.6 A A Pulsed Drain Current (Note 3) I 20 A DM o T =25 C 2.0 A Power Dissipation for Single Operation (Note 2) P W D o T =70 C 1.28 A o Junction and Storage Temperature Range T , T -55~150 C J stg Thermal Characteristics Characteristics Symbol Rating Unit Thermal Resistance, Junction-to-Ambient (Steady-State) (Note 1) RJA 62.5 o C/W Thermal Resistance, Junction-to-Case RJC 34.0 February 2010. Version2.0 1 MagnaChip Semiconductor Ltd. MDS5951 Dual N-Channel Trench MOSFET Ordering Information Part Number Temp. Range Package Packing RoHS Status o MDS5951URH -55~150 C SOIC-8 Tape & Reel Halogen Free o Electrical Characteristics (T =25 C unless otherwise noted) A Characteristics Symbol Test Condition Min Typ Max Unit Static Characteristics Drain-Source Breakdown Voltage BV I = 250A, V = 0V 60 - - DSS D GS V Gate Threshold Voltage V V = V , I = 250A 1.0 2.0 3.0 GS(th) DS GS D Zero Gate Voltage Drain Current I V = 60V, V = 0V - - 1 DSS DS GS A Gate Leakage Current I V = 20V, V = 0V - - 0.1 GSS GS DS V = 10V, I = 4.5A - 38 50 GS D Drain-Source ON Resistance R m DS(ON) V = 4.5V, I = 3.0A - 46 60 GS D Forward Transconductance g V = 10V, I =3.3A - 11 - S FS DS D Dynamic Characteristics Total Gate Charge ( V =10V) - 9.0 10.5 gs Q g Total Gate Charge ( V =4.5V) 4.4 gs V = 30V, I = 4.5A, V = 10V nC DS D GS Gate-Source Charge Q - 1.5 - gs Gate-Drain Charge Q - 2.0 - gd Input Capacitance C - 420 - iss Reverse Transfer Capacitance C VDS = 30V, VGS = 0V, f = 1.0MHz - 25 - pF rss Output Capacitance C - 50 - oss Turn-On Delay Time t - 4.5 - d(on) Turn-On Rise Time t - 20 - r V = 10V ,V = 30V, GS DS ns RL = 6.7, RGEN = 5 Turn-Off Delay Time t - 15 - d(off) Turn-Off Fall Time t - 9.5 - f Drain-Source Body Diode Characteristics Source-Drain Diode Forward Voltage V I = 1.0A, V = 0V - 0.7 1.1 V SD S GS Body Diode Reverse Recovery Time t - 21 30 ns rr I = 4.5A, di/dt = 100A/s F Body Diode Reverse Recovery Charge Qrr - 25 - nC Note : 1. Surface mounted RF4 board with 2oz. Copper. PDSM is based on R JA and the maximum allowed junction temperature of 150C. 2. PD is based on T =150C, using R J(MAX) JA, 3. Pulse test: pulse width 300us, duty cycle2%, pulse width limited by junction temperature T =150C. J(MAX) 4. Static characteristics are obtained using <300 s pulses, duty cycle 0.5% max. February 2010. Version2.0 2 MagnaChip Semiconductor Ltd.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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