SUD50P06-15 www.vishay.com Vishay Siliconix P-Channel 60 V (D-S) MOSFET FEATURES TOTO-252 TrenchFET power MOSFET Material categorization: Drain connected to tab for definitions of compliance please see www.vishay.com/doc 99912 APPLICATIONS S Load switch S D G Top View G PRODUCT SUMMARY V (V) -60 DS R max. ( ) at V = -10 V 0.015 DS(on) GS D R max. ( ) at V = -4.5 V 0.020 DS(on) GS d I (A) -50 D P-Channel MOSFET Configuration Single ORDERING INFORMATION Package TO-252 SUD50P06-15-GE3 Lead (Pb)-free and halogen-free SUD50P06-15-T4-GE3 ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) A PARAMETER SYMBOL LIMITUNIT Drain-source voltage V -60 DS V Gate-source voltage V 20 GS d T = 25 C -50 C Continuous drain current (T = 175 C) I J D T = 125 C -27.5 C A Pulsed drain current I -80 DM Avalanche current I -50 AS a Single pulse avalanche energy L = 0.1 mH E 125 mJ AS c T = 25 C 113 C Power dissipation P W D b, c T = 25 C 2.5 A Operating junction and storage temperature range T , T -55 to +150 C J stg THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYPICALMAXIMUMUNIT t 10 s 15 18 b Junction-to-ambient R thJA Steady state 40 50 C/W Junction-to-case R 0.82 1.1 thJC Notes a. Duty cycle 1% b. When mounted on 1 square PCB (FR4 material) c. See SOA curve for voltage derating d. Package limited S19-0387 Rev. D, 29-Apr-2019 Document Number: 68940 1 For technical questions, contact: pmostechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 SUD50P06-15 www.vishay.com Vishay Siliconix SPECIFICATIONS (T = 25 C, unless otherwise noted) J PARAMETER SYMBOL TEST CONDITIONS MIN.TYP.MAX.UNIT Static Drain-source breakdown voltage V V = 0 V, I = -250 A -60 - - DS GS D V Gate threshold voltage V V = V , I = -250 A -1 - -3 GS(th) DS GS D Gate-body leakage I V = 0 V, V = 20 V - - 100 nA GSS DS GS V = -60 V, V = 0 V - - -1 DS GS Zero gate voltage drain current I V = -60 V, V = 0 V, T = 125 C - - -50 A DSS DS GS J V = -60 V, V = 0 V, T = 150 C - - -100 DS GS J a On-state drain current I V = -5 V, V = -10 V -50 - - A D(on) DS GS V = -10 V, I = -17 A - 0.012 0.015 GS D V = -10 V, I = -50 A, T = 125 C - - 0.025 GS D J a Drain-source on-state resistance R DS(on) V = -10 V, I = -50 A, T = 150 C - - 0.028 GS D J V = -4.5 V, I = -14 A - - 0.020 GS D a Forward transconductance g V = -15 V, I = -17 A - 61 - S fs DS D b Dynamic Input capacitance C - 4950 - iss Output capacitance C V = 0 V, V = -25 V, f = 1 MHz - 480 - pF oss GS DS Reverse transfer capacitance C -405- rss c Total gate charge Q - 110 165 g c Gate-source charge Q V = -30 V, V = -10 V, I = -50 A -19- nC gs DS GS D c Gate-drain charge Q -28- gd c Turn-on delay time t -15 23 d(on) c Rise time t -70 105 r V = -30 V, R = 0.6 DD L ns c I -50 A, V = -10 V, R = 6 Turn-off delay time t -D GEN G175260 d(off) c Fall time t - 175 260 f b Source-Drain Diode Ratings and Characteristics T = 25 C C Continuous current I -- -50 S A Pulsed current I -- -80 SM a Forward voltage V I = -50 A, V = 0 V --1 -1.6 V F GS SD I = -50 A, di/dt = 100 A/s Reverse recovery time t -45 70 ns rr F Notes a. Pulse test pulse width 300 s, duty cycle 2 % b. Guaranteed by design, not subject to production testing c. Independent of operating temperature Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S19-0387 Rev. D, 29-Apr-2019 Document Number: 68940 2 For technical questions, contact: pmostechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000