SUM75N06-09L Vishay Siliconix N-Channel 60-V (D-S), 175 C MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET V (V) r ()I (A) (BR)DSS DS(on) D Available 175 C Junction Temperature 0.0093 at V = 10 V 90 GS RoHS* 60 0.0135 at V = 4.5 V 62 COMPLIANT GS D TO-263 G DRAIN connected to TAB G D S Top View S Ordering Information: SUM75N06-09L-E3 (Lead (Pb)-free) N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS T = 25 C, unless otherwise noted A Parameter Symbol Limit Unit Drain-Source Voltage V 60 DS V V Gate-Source Voltage 20 GS T = 25 C 90 C Continuous Drain Current (T = 175 C) I J D T = 100 C 53 C A I Pulsed Drain Current 160 DM I Avalanche Current 50 AR a E L = 0.1 mH 125 mJ Repetitive Avalanche Energy AR b T = 25 C C 125 Power Dissipation P W D c c T = 25 C 3.75 A Operating Junction and Storage Temperature Range T , T - 55 to 175 C J stg THERMAL RESISTANCE RATINGS Parameter Symbol Limit Unit c R Junction-to-Ambient 40 (PCB Mount) thJA C/W Junction-to-Case R 1.2 thJC Notes: a. Duty cycle 1 %. b. See SOA curve for voltage derating. c. When Mounted on 1 square PCB (FR-4 material). * Pb containing terminations are not RoHS compliant, exemptions may apply. Document Number: 72037 www.vishay.com S-80274-Rev. B, 11-Feb-08 1SUM75N06-09L Vishay Siliconix MOSFET SPECIFICATIONS T = 25 C, unless otherwise noted J Parameter Symbol Test Conditions Min.Typ.Max.Unit Static V V = 0 V, I = 250 A Drain-Source Breakdown Voltage 60 (BR)DSS GS D V V V = V , I = 250 A Gate-Threshold Voltage 12 3 GS(th) DS GS D I V = 0 V, V = 20 V Gate-Body Leakage 100 nA GSS DS GS V = 60 V, V = 0 V 1 DS GS I V = 60 V, V = 0 V, T = 125 C Zero Gate Voltage Drain Current 50 A DSS DS GS J V = 60 V, V = 0 V, T = 175 C 150 DS GS J a I V = 5 V, V = 10 V 75 A On-State Drain Current D(on) DS GS V = 10 V, I = 30 A 0.0075 0.0093 GS D V = 10 V, I = 30 A, T = 125 C 0.0163 GS D J V = 10 V, I = 30 A, T = 175 C 0.024 GS D J a r Drain-Source On-State Resistance DS(on) V = 4.5 V, I = 30 A 0.0105 0.0135 GS D V = 4.5 V, I = 30 A, T = 125 C 0.0224 GS D J V = 4.5 V, I = 30 A, T = 175 C 0.030 GS D J a g V = 15 V, I = 30 A 25 75 S Forward Transconductance fs DS D b Dynamic C Input Capacitance 2400 iss Output Capacitance C V = 0 V, V = 25 V, f = 1 MHz 430 pF oss GS DS C Reversen Transfer Capacitance 210 rss c Q 47 75 Total Gate Charge g c Q V = 30 V, V = 10 V, I = 90 A Gate-Source Charge 12 nC gs DS GS D c Q 13 Gate-Drain Charge gd c t Turn-On Delay Time 712 d(on) c t V = 30 V, R = 0.4 30 50 Rise Time r DD L ns c I 90 A, V = 10 V, R = 2.5 t Turn-Off Delay Time D GEN G 25 40 d(off) c t 12 20 Fall Time f b Source-Drain Diode Ratings and Characteristics T = 25 C C I Continuous Current 90 S A I Pulsed Current 160 180 SM a V I = 90 A, V = 0 V 1.4 V Forward Voltage SD F GS t Reverse Recovery Time 40 80 ns rr Peak Reverse Recovery Current I I = 50 A, di/dt = 100 A/s 24 A RM(REC) F Q Reverse Recovery Charge 0.040 0.16 C rr Notes: a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com Document Number: 72037 2 S-80274-Rev. B, 11-Feb-08