V10P45S-M3 www.vishay.com Vishay General Semiconductor SMD Photovoltaic Solar Cell Protection Schottky Rectifier Ultra Low V = 0.34 V at I = 5 A F F FEATURES Very low profile - typical height of 1.1 mm TMBS eSMP Series Ideal for automated placement Trench MOS Schottky technology K Low forward voltage drop, low power losses High efficiency operation 1 2 Meets MSL level 1, per J-STD-020, LF maximum peak of 260 C TO-277A (SMPC) Material categorization: For definitions of compliance please see www.vishay.com/doc 99912 K Anode 1 Cathode Anode 2 TYPICAL APPLICATIONS For use in solar cell junction box as a bypass diode for protection, using DC forward current without reverse bias. PRIMARY CHARACTERISTICS I 10 A F(AV) MECHANICAL DATA V 45 V RRM Case: TO-277A (SMPC) I 180 A FSM Molding compound meets UL 94 V-0 flammability rating V at I = 10 A 0.41 V F F Base P/N-M3 - halogen-free, RoHS-compliant, and commercial grade T max. 150 C OP Package TO-277A (SMPC) Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 Diode variation Single die M3 suffix meets JESD 201 class 2 whisker test MAXIMUM RATINGS (T = 25 C unless otherwise noted) A PARAMETER SYMBOL V10P45S UNIT Device marking code 1045S Maximum repetitive peak reverse voltage V 45 V RRM (1) I 10 F Maximum DC forward current A (2) I 4.4 F Peak forward surge current 10 ms single half sine-wave I 180 A FSM superimposed on rated load Junction temperature in DC forward current (3) T 200 C J without reverse bias, t 1 h Operating junction temperature range T -40 to +150 C OP Storage temperature range T -40 to +175 C STG Notes (1) Mounted on 30 mm x 30 mm aluminum PCB (2) Free air, mounted on recommended copper pad area (3) Meets the requirements of IEC 61215 ed. 2 bypass diode thermal test Revision: 28-Nov-13 Document Number: 89341 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 V10P45S-M3 www.vishay.com Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise noted) A PARAMETER TEST CONDITIONS SYMBOL TYP. MAX. UNIT I = 5.0 A 0.42 - F T = 25 C A I = 10 A 0.48 0.57 F (1) Instantaneous forward voltage V V F I = 5.0 A 0.34 - F T = 125 C A I = 10 A 0.41 0.50 F T = 25 C 21 800 A A (2) Reverse current V = 45 V I R R T = 125 C 9 35 mA A Notes (1) Pulse test: 300 s pulse width, 1 % duty cycle (2) Pulse test: Pulse width 40 ms THERMAL CHARACTERISTICS (T = 25 C unless otherwise noted) A PARAMETER SYMBOL V10P45SUNIT (1) R 75 JA Typical thermal resistance C/W (2) R 4 JM Notes (1) Free air, mounted on recommended copper pad area thermal resistance R - junction to ambient JA (2) Mounted on 30 mm x 30 mm aluminum PCB thermal resistance R - junction to mount JM ORDERING INFORMATION (Example) PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE V10P45S-M3/86A 0.10 86A 1500 7 diameter plastic tape and reel V10P45S-M3/87A 0.10 87A 6500 13 diameter plastic tape and reel RATINGS AND CHARACTERISTICS CURVES (T = 25 C unless otherwise noted) A 12 7 (1) D = 0.8 T = 126 C D = 0.5 M 6 10 D = 0.3 D = 0.2 5 8 D = 0.1 D = 1.0 4 6 (2) T = 25 C 3 A T 4 2 2 1 D = t /T t p p 0 0 0 25 50 75 100 125 150 062418012 T - Mount Temperature (C) Average Forward Current (A) M Fig. 1 - Forward Current Derating Curve Fig. 2 - Forward Power Loss Characteristics Notes (1) Mounted on 30 mm x 30 mm aluminum PCB T measured M at the terminal of cathode band (R = 4 C/W) JM (2) Free air, mounted on recommended copper pad area (R = 75 C/W) JA Revision: 28-Nov-13 Document Number: 89341 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 DC Forward Current (A) Average Power Loss (W)