X-On Electronics has gained recognition as a prominent supplier of VS-12CWQ10FN-M3 Schottky Diodes & Rectifiers across the USA, India, Europe, Australia, and various other global locations. VS-12CWQ10FN-M3 Schottky Diodes & Rectifiers are a product manufactured by Vishay. We provide cost-effective solutions for Schottky Diodes & Rectifiers, ensuring timely deliveries around the world.

VS-12CWQ10FN-M3 Vishay

Hot VS-12CWQ10FN-M3 electronic component of Vishay
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Part No.VS-12CWQ10FN-M3
Manufacturer: Vishay
Category: Schottky Diodes & Rectifiers
Description: Schottky Diodes & Rectifiers Schottky - D-PAK-e3
Datasheet: VS-12CWQ10FN-M3 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.0883 ea
Line Total: USD 0.09 
Availability - 6
Ship by Thu. 07 Nov to Wed. 13 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
6
Ship by Thu. 07 Nov to Wed. 13 Nov
MOQ : 1
Multiples : 1
1 : USD 0.0883

2312
Ship by Thu. 14 Nov to Tue. 19 Nov
MOQ : 1
Multiples : 1
1 : USD 0.6897
10 : USD 0.5824
30 : USD 0.5307
75 : USD 0.4157
525 : USD 0.3851
975 : USD 0.3679

4313
Ship by Wed. 13 Nov to Fri. 15 Nov
MOQ : 1
Multiples : 1
1 : USD 1.196
10 : USD 0.6601
100 : USD 0.5968
500 : USD 0.5049
1000 : USD 0.4566

468
Ship by Thu. 07 Nov to Wed. 13 Nov
MOQ : 1
Multiples : 1
1 : USD 1.218
5 : USD 1.1088
21 : USD 0.84
57 : USD 0.798

4437
Ship by Thu. 07 Nov to Wed. 13 Nov
MOQ : 13
Multiples : 1
13 : USD 0.7458
100 : USD 0.6327
500 : USD 0.5255

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Product
Mounting Style
Package / Case
Configuration
Technology
If - Forward Current
Vrrm - Repetitive Reverse Voltage
Vf - Forward Voltage
Ifsm - Forward Surge Current
Ir - Reverse Current
trr - Reverse Recovery time
Pd - Power Dissipation
Minimum Operating Temperature
Maximum Operating Temperature
Packaging
Brand
Cnhts
Hts Code
Mxhts
Product Type
Factory Pack Quantity :
Subcategory
Taric
Vr - Reverse Voltage
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We are delighted to provide the VS-12CWQ10FN-M3 from our Schottky Diodes & Rectifiers category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the VS-12CWQ10FN-M3 and other electronic components in the Schottky Diodes & Rectifiers category and beyond.

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VS-12CWQ10FN-M3 www.vishay.com Vishay Semiconductors High Performance Schottky Rectifier, 2 x 6 A FEATURES Base common Low forward voltage drop cathode 4 Guard ring for enhanced ruggedness and long term reliability Popular D-PAK outline Center tap configuration 2 Small foot print, surface mountable Common cathode High frequency operation D-PAK (TO-252AA) 13 Anode Anode Meets MSL level 1, per J-STD-020, LF maximum peak of 260 C Material categorization: for definitions of compliance PRODUCT SUMMARY please see www.vishay.com/doc 99912 Package D-PAK (TO-252AA) I 2 x 6 A F(AV) DESCRIPTION V 100 V The VS-12CWQ10FN-M3 surface mount, center tap, R Schottky rectifier series has been designed for applications V at I 0.65 V F F requiring low forward drop and small foot prints on PC I 4 mA at 125 C RM board. Typical applications are in disk drives, switching T max. 150 C power supplies, converters, freewheeling diodes, battery J charging, and reverse battery protection. Diode variation Common cathode E 6 mJ AS MAJOR RATINGS AND CHARACTERISTICS SYMBOL CHARACTERISTICS VALUES UNITS I Rectangular waveform 12 A F(AV) V 100 V RRM I t = 5 s sine 330 A FSM p V 6 A , T = 125 C (per leg) 0.65 V F pk J T Range -55 to +150 C J VOLTAGE RATINGS PARAMETER SYMBOL VS-12CWQ10FN-M3 UNITS Maximum DC reverse voltage V R 100 V Maximum working peak reverse voltage V RWM ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS VALUESUNITS Maximum average per leg 6 forward current I 50 % duty cycle at T = 135 C, rectangular waveform A F(AV) C per device 12 See fig. 5 Maximum peak one cycle Following any rated 5 s sine or 3 s rect. pulse 330 non-repetitive surge current per leg I load condition and with A FSM 10 ms sine or 6 ms rect. pulse 110 See fig. 7 rated V applied RRM Non-repetitive avalanche energy per leg E T = 25 C, I = 1 A, L = 12 mH 6 mJ AS J AS Current decaying linearly to zero in 1 s Repetitive avalanche current per leg I 1A AR Frequency limited by T maximum V = 1.5 x V typical J A R Revision: 22-Nov-16 Document Number: 93295 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000VS-12CWQ10FN-M3 www.vishay.com Vishay Semiconductors ELECTRICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS 6 A 0.80 T = 25 C J Maximum forward 12 A 0.95 (1) voltage drop per leg V V FM 6 A 0.65 See fig. 1 T = 125 C J 12 A 0.78 Maximum reverse T = 25 C 1 J (1) leakage current per leg I V = Rated V mA RM R R T = 125 C 4 See fig. 2 J Threshold voltage V 0.47 V F(TO) T = T maximum J J Forward slope resistance r 20.68 m t Typical junction capacitance per leg C V = 5 V , (test signal range 100 kHz to 1 MHz), 25 C 183 pF T R DC Typical series inductance per leg L Measured lead to lead 5 mm from package body 5.0 nH S Note (1) Pulse width < 300 s, duty cycle < 2 % THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum junction and storage (1) T , T -55 to +150 C J Stg temperature range per leg 3.0 Maximum thermal resistance, DC operation R C/W thJC junction to case See fig. 4 per device 1.5 0.3 g Approximate weight 0.01 oz. Marking device Case style D-PAK (similar to TO-252AA) 12CWQ10FN Note dP 1 tot (1) ------------- < -------------- thermal runaway condition for a diode on its own heatsink dT R J thJA Revision: 22-Nov-16 Document Number: 93295 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
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Vishay / BC Components
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Vishay / Electro-Films
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Vishay / MCB Industrie
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Vishay / Milwaukee
Vishay / Polytech
Vishay / Roederstein
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Vishay / Spectrol
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