VS-12TQ045SPBF Vishay

VS-12TQ045SPBF electronic component of Vishay
VS-12TQ045SPBF Vishay
VS-12TQ045SPBF Schottky Diodes & Rectifiers
VS-12TQ045SPBF  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of VS-12TQ045SPBF Schottky Diodes & Rectifiers across the USA, India, Europe, Australia, and various other global locations. VS-12TQ045SPBF Schottky Diodes & Rectifiers are a product manufactured by Vishay. We provide cost-effective solutions for Schottky Diodes & Rectifiers, ensuring timely deliveries around the world.

Part No. VS-12TQ045SPBF
Manufacturer: Vishay
Category: Schottky Diodes & Rectifiers
Description: Schottky Diodes & Rectifiers RECOMMENDED ALT 78-VS-12TQ045S-M3
Datasheet: VS-12TQ045SPBF Datasheet (PDF)
Price (USD)
N/A

Obsolete

Availability 0
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 2.8898
10$ 2.3978
100$ 1.9681
250$ 1.9127
500$ 1.7186
1000$ 1.6182
2500$ 1.6182
5000$ 1.607
10000$ 1.5508
N/A

Obsolete

Availability 0
MOQ : 83
Multiples : 1
QtyUnit Price
83$ 1.1397
100$ 1.1229
250$ 1.1067
N/A

Obsolete
   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Product
Mounting Style
Package / Case
Configuration
Technology
If - Forward Current
Vrrm - Repetitive Reverse Voltage
Vf - Forward Voltage
Ifsm - Forward Surge Current
Ir - Reverse Current
Minimum Operating Temperature
Maximum Operating Temperature
Packaging
Operating Temperature Range
Brand
Forward Continuous Current
Max Surge Current
Forward Voltage Drop
Maximum Reverse Leakage Current
Peak Reverse Voltage
Factory Pack Quantity :
Height
Length
Type
Width
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the VS-12TQ045SPBF from our Schottky Diodes & Rectifiers category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the VS-12TQ045SPBF and other electronic components in the Schottky Diodes & Rectifiers category and beyond.

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VS-12TQ035SPbF, VS-12TQ040SPbF, VS-12TQ045SPbF www.vishay.com Vishay Semiconductors High Performance Schottky Rectifier, 15 A FEATURES 150 C T operation Base J cathode Very low forward voltage drop 2 High frequency operation High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance 3 1 2 Guard ring for enhanced ruggedness and long D PAK N/C Anode term reliability Meets MSL level 1, per J-STD-020, LF maximum peak of 260 C PRODUCT SUMMARY AEC-Q101 qualified 2 Package D PAK Material categorization: for definitions of compliance I 15 A F(AV) please see www.vishay.com/doc 99912 V 35 V, 40 V, 45 V R DESCRIPTION V at I 0.50 V F F The VS-12TQ...SPbF Schottky rectifier series has been I 70 mA at 125 C RM optimized for very low forward voltage drop, with moderate T max. 150 C J leakage. The proprietary barrier technology allows for reliable operation up to 150 C junction temperature. Typical Diode variation Single die applications are in switching power supplies, converters, E 16 mJ AS freewheeling diodes, and reverse battery protection. MAJOR RATINGS AND CHARACTERISTICS SYMBOL CHARACTERISTICS VALUES UNITS I Rectangular waveform 15 A F(AV) V Range 35 to 45 V RRM I t = 5 s sine 990 A FSM p V 15 A , T = 125 C 0.50 V F pk J T Range -55 to +150 C J VOLTAGE RATINGS PARAMETER SYMBOL VS-12TQ035SPbF VS-12TQ040SPbF VS-12TQ045SPbF UNITS Maximum DC reverse voltage V R 35 40 45 V Maximum working peak reverse voltage V RWM ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS VALUESUNITS Maximum average forward current I 50 % duty cycle at T = 120 C, rectangular waveform 15 A F(AV) C See fig. 5 5 s sine or 3 s rect. pulse 990 Maximum peak one cycle Following any rated non-repetitive surge current I load condition and with A FSM See fig. 7 10 ms sine or 6 ms rect. pulse rated V applied 250 RRM Non-repetitive avalanche energy E T = 25 C, I = 2.4 A, L = 5.5 mH 16 mJ AS J AS Current decaying linearly to zero in 1 s Repetitive avalanche current I 2.4 A AR Frequency limited by T maximum V = 1.5 x V typical J A R Revision: 23-May-14 Document Number: 94138 1 For technical questions within your region: DiodesAmericas vishay.com, iodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000VS-12TQ035SPbF, VS-12TQ040SPbF, VS-12TQ045SPbF www.vishay.com Vishay Semiconductors ELECTRICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUESUNITS 15 A 0.56 T = 25 C J 30 A 0.71 Maximum forward voltage drop (1) V V FM See fig. 1 15 A 0.50 T = 125 C J 30 A 0.64 T = 25 C 1.75 J Maximum reverse leakage current (1) I V = Rated V mA RM R R See fig. 2 T = 125 C 70 J Maximum junction capacitance C V = 5 V (test signal range 100 kHz to 1 MHz), 25 C 900 pF T R DC Typical series inductance L Measured lead to lead 5 mm from package body 8.0 nH S Maximum voltage rate of change dV/dt Rated V 10 000 V/s R Note (1) Pulse width < 300 s, duty cycle < 2 % THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum junction and storage T , T -55 to +150 C J Stg temperature range Maximum thermal resistance, DC operation R 2.0 thJC junction to case See fig. 4 C/W Typical thermal resistance, R Mounting surface, smooth and greased 0.50 thCS case to heatsink 2g Approximate weight 0.07 oz. minimum 6 (5) kgf cm Mounting torque (lbf in) maximum 12 (10) 2 PAK 12TQ045S Marking device Case style D 1000 100 T = 150 C J 10 T = 125 C J T = 150 C J T = 100 C J 1 T = 125 C J T = 25 C J T = 75 C J 0.1 T = 50 C J 0.01 T = 25 C J 0.001 0541021503250 35045 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 V - Forward Voltage Drop (V) V - Reverse Voltage (V) FM R Fig. 1 - Maximum Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage Revision: 23-May-14 Document Number: 94138 2 For technical questions within your region: DiodesAmericas vishay.com, iodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 1000 100 10 1 0.1 I - Instantaneous Forward Current (A) F I - Reverse Current (mA) R

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
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