Product Information

VS-12TTS08-M3

VS-12TTS08-M3 electronic component of Vishay

Datasheet
Schottky Diodes & Rectifiers New Input Thyristor - TO-220-e3

Manufacturer: Vishay
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 3.5535 ea
Line Total: USD 3.55

964 - Global Stock
Ships to you between
Tue. 28 May to Thu. 30 May
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
964 - WHS 1


Ships to you between Tue. 28 May to Thu. 30 May

MOQ : 1
Multiples : 1
1 : USD 3.5535
10 : USD 3.082
100 : USD 2.4955
250 : USD 2.4265
500 : USD 2.1735
1000 : USD 1.8975

     
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VS-12TTS08PbF, VS-12TTS08-M3 www.vishay.com Vishay Semiconductors High Voltage Phase Control Thyristor, 12 A FEATURES 2 (A) Designed and qualified according to JEDEC-JESD47 125 C max. operating junction temperature Material categorization: 3 For definitions of compliance please see 2 1 (K) (G) 3 1 www.vishay.com/doc 99912 TO-220AB Available APPLICATIONS Typical usage is in input rectification crowbar (soft start) PRODUCT SUMMARY and AC switch in motor control, UPS, welding, and battery Package TO-220AB charge. Diode variation Single SCR DESCRIPTION 8 A I T(AV) The VS-12TTS08... high voltage series of silicon controlled V /V 800 V DRM RRM rectifiers are specifically designed for medium power switching and phase control applications. The glass V 1.2 V TM passivation technology used has reliable operation up to I 15 mA GT 125 C junction temperature. T - 40 C to 125 C J OUTPUT CURRENT IN TYPICAL APPLICATIONS APPLICATIONS SINGLE-PHASE BRIDGE THREE-PHASE BRIDGE UNITS Capacitive input filter T = 55 C, T = 125 C, A J 13.5 17 A common heatsink of 1 C/W MAJOR RATINGS AND CHARACTERISTICS PARAMETER TEST CONDITIONS VALUES UNITS I Sinusoidal waveform 8 T(AV) A I 12.5 T(RMS) V /V 800 V DRM RRM I 110 A TSM V 8 A, T = 25 C 1.2 V T J dV/dt 150 V/s dI/dt 100 A/s T Range - 40 to 125 C J VOLTAGE RATINGS V , MAXIMUM V , MAXIMUM PEAK I /I RRM DRM RRM DRM PART NUMBER PEAK VOLTAGE DIRECT VOLTAGE AT 125 C V V mA VS-12TTS08PbF, VS-12TTS08-M3 800 800 1.0 Revision: 26-Jul-13 Document Number: 94380 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000VS-12TTS08PbF, VS-12TTS08-M3 www.vishay.com Vishay Semiconductors ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS VALUESUNITS Maximum average on-state current I 8 T(AV) T = 108 C, 180 conduction, half sine wave C Maximum RMS on-state current I 12.5 T(RMS) A 10 ms sine pulse, rated V applied, T = 125 C 95 Maximum peak, one-cycle, RRM J I TSM non-repetitive surge current 10 ms sine pulse, no voltage reapplied, T = 125 C 110 J 10 ms sine pulse, rated V applied, T = 125 C 45 RRM J 2 2 2 Maximum I t for fusing I t A s 10 ms sine pulse, no voltage reapplied, T = 125 C 64 J 2 2 2 Maximum I t for fusing I t t = 0.1 ms to 10 ms, no voltage reapplied, T = 125 C 640 A s J Maximum on-state voltage drop V 8 A, T = 25 C 1.2 V TM J On-state slope resistance r 16.2 m t T = 125 C J Threshold voltage V 0.87 V T(TO) T = 25 C 0.05 Maximum reverse and direct leakage J I /I V = Rated V /V RM DM R RRM DRM current T = 125 C 1.0 J mA Anode supply = 6 V, resistive load, initial I = 1 A, T Typical holding current I 30 H T = 25 C J Maximum latching current I Anode supply = 6 V, resistive load, T = 25 C 50 L J Maximum rate of rise of off-state voltage dV/dt T = T max., linear to 80 C, V = R - k = Open 150 V/s J J DRM g Maximum rate of rise of turned-on current dI/dt 100 A/s TRIGGERING PARAMETER SYMBOL TEST CONDITIONS VALUESUNITS Maximum peak gate power P 8.0 GM W Maximum average gate power P 2.0 G(AV) Maximum peak positive gate current + I 1.5 A GM Maximum peak negative gate voltage - V 10 V GM Anode supply = 6 V, resistive load, T = - 65 C 20 J Maximum required DC gate current to I Anode supply = 6 V, resistive load, T = 25 C 15 mA GT J trigger Anode supply = 6 V, resistive load, T = 125 C 10 J Anode supply = 6 V, resistive load, T = - 65 C 1.2 J Maximum required DC gate V Anode supply = 6 V, resistive load, T = 25 C 1 GT J voltage to trigger V Anode supply = 6 V, resistive load, T = 125 C 0.7 J Maximum DC gate voltage not to trigger V 0.2 GD T = 125 C, V = Rated value J DRM Maximum DC gate current not to trigger I 0.1 mA GD SWITCHING PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Typical turn-on time t T = 25 C 0.8 gt J Typical reverse recovery time t 3 s rr T = 125 C J Typical turn-off time t 100 q Revision: 26-Jul-13 Document Number: 94380 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
BC
BC COMPONENTS
BC COMPONENTS (VISHAY)
BCC
BEYSCHLAG
DALE
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DLE
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General Semi
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