VS-40L15CTPbF, VS-40L15CT-N3
www.vishay.com
Vishay Semiconductors
Schottky Rectifier, 2 x 20 A
FEATURES
Base
2
common
125 C T operation (V < 5 V)
J R
cathode
Very low forward voltage drop
High frequency operation
High purity, high temperature epoxy
encapsulation for enhanced mechanical strength
Anode 2 Anode
and moisture resistance
13Common
TO-220AB
cathode
Guard ring for enhanced ruggedness and long
term reliability
Compliant to RoHS Directive 2002/95/EC
PRODUCT SUMMARY
Designed and qualified according to JEDEC-JESD47
Package TO-220AB
Halogen-free according to IEC 61249-2-21 definition
I 2 x 20 A (-N3 only)
F(AV)
V 15 V
R
DESCRIPTION
V at I See Electrical table
F F
This center tap Schottky rectifier has been optimized for
I max. 600 mA at 100 C
RM
very low forward voltage drop, with moderate leakage. The
T max. 125 C
J proprietary barrier technology allows for reliable operation
up to 125 C junction temperature. Typical applications are
Diode variation Common cathode
in switching power supplies, converters, freewheeling
E 10 mJ
AS
diodes, and reverse battery protection.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL CHARACTERISTICS VALUES UNITS
I Rectangular waveform 40 A
F(AV)
V 15 V
RRM
I t = 5 s sine 700 A
FSM p
V 19 A , T = 125 C (per leg) 0.25 V
F pk J
T Range - 55 to 125 C
J
VOLTAGE RATINGS
PARAMETER SYMBOLVS-40L15CTPbFVS-40L15CT-N3UNITS
Maximum DC reverse voltage V
R
15 15 V
Maximum working peak reverse voltage V
RWM
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average
per leg 20
forward current I 50 % duty cycle at T = 85 C, rectangular waveform
F(AV) C
per device 40
See fig. 5
A
Maximum peak one cycle non-repetitive
5 s sine or 3 s rect. pulse Following any rated 700
surge current per leg I load condition and with
FSM
10 ms sine or 6 ms rect. pulse rated V applied 330
RRM
See fig. 7
Non-repetitive avalanche energy per leg E T = 25 C, I = 2 A, L = 6 mH 10 mJ
AS J AS
Current decaying linearly to zero in 1 s
Repetitive avalanche current per leg I 2A
AR
Frequency limited by T maximum V = 1.5 x V typical
J A R
Revision: 29-Aug-11 Document Number: 94216
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-40L15CTPbF, VS-40L15CT-N3
www.vishay.com
Vishay Semiconductors
ELECTRICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS TYP. MAX. UNITS
19 A -0.41
T = 25 C
J
40 A -0.52
Forward voltage drop per leg
(1)
V V
FM
See fig. 1
19 A 0.25 0.33
T = 125 C
J
40 A 0.37 0.50
T = 25 C -10
Reverse leakage current per leg J
(1)
I V = Rated V mA
RM R R
See fig. 2
T = 100 C - 600
J
Threshold voltage V 0.182 V
F(TO)
T = T maximum
J J
Forward slope resistance r 7.6 m
t
Maximum junction capacitance per leg C V = 5 V (test signal range 100 kHz to 1 MHz) 25 C - 2000 pF
T R DC
Typical series inductance per leg L Measured lead to lead 5 mm from package body 8- nH
S
Maximum voltage rate of change dV/dt Rated V 10 000 V/s
R
Note
(1)
Pulse width < 300 s, duty cycle < 2 %
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum junction and storage
T , T - 55 to 125 C
J Stg
temperature range
Maximum thermal resistance,
R DC operation 1.5
thJC
junction to case per leg
C/W
Typical thermal resistance,
R Mounting surface, smooth and greased 0.50
thCS
case to heatsink
2g
Approximate weight
0.07 oz.
minimum 6 (5)
kgf cm
Mounting torque
(lbf in)
maximum 12 (10)
Marking device Case style TO-220AB 40L15CT
Revision: 29-Aug-11 Document Number: 94216
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000