NSVBAS16WT3G ON Semiconductor

BAS16WT1G Silicon Switching Diode Features S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements AECQ101 Qualified and PPAP Capable BAS16WT1G ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) A Characteristic Symbol Min Max Unit Forward Voltage V mV F (I = 1.0 mA) 715 F (I = 10 mA) 866 F (I = 50 mA) 1000 F (I = 150 mA) 1250 F Reverse Current I A R (V = 100 V) 1.0 R (V = 75 V, T = 150C) 50 R J (V = 25 V, T = 150C) 30 R J Capacitance C 2.0 pF D (V = 0, f = 1.0 MHz) R Reverse Recovery Time t 6.0 ns rr (I = I = 10 mA, R = 50 ) (Figure 1) F R L Stored Charge QS 45 PC (I = 10 mA to V = 6.0 V, R = 500 ) (Figure 2) F R L Forward Recovery Voltage V 1.75 V FR (I = 10 mA, t = 20 ns) (Figure 3) F r