BT169H,412 WeEn Semiconductor

BT169H SCR 5 September 2018 Product data sheet 1. General description Planar passivated sensitive gate Silicon Controlled Rectifier in a SOT54 (TO-92) plastic package. 2. Features and benefits High voltage capability Planar passivated for voltage ruggedness and reliability Sensitive gate 3. Applications Earth leakage circuit breakers or Ground Fault Circuit Interrupters (GFCI) Ignition circuits Low power latching circuits Protection circuits / shut-down circuits: lighting ballasts Protection circuits / shut-down circuits: Switched Mode Power Supplies 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V repetitive peak reverse - - 800 V RRM voltage I average on-state half sine wave T 83 C Fig. 1 - - 0.5 A T(AV) lead current I RMS on-state current half sine wave T 83 C Fig. 2 - - 0.8 A T(RMS) lead Fig. 3 I non-repetitive peak on- half sine wave T = 25 C - - 10 A TSM j(init) state current t = 8.3 ms p half sine wave T = 25 C - - 9 A j(init) t = 10 ms Fig. 4 Fig. 5 p T junction temperature - - 125 C j Static characteristics I gate trigger current V = 12 V I = 10 mA T = 25 C 1 50 100 A GT D T j Fig. 7 Dynamic characteristics dV /dt rate of rise of off-state V = 536 V T = 125 C R = 1 k 150 350 - V/s D DM j GK voltage (V = 67% of V ) exponential DM DRM waveform Fig. 12WeEn Semiconductors BT169H SCR 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 A anode A K G 2 G gate sym037 3 K cathode 3 2 1 TO-92 (SOT54) 6. Ordering information Table 3. Ordering information Type number Package Name Description Version BT169H TO-92 plastic single-ended leaded (through hole) package 3 leads SOT54 BT169H All information provided in this document is subject to legal disclaimers. WeEn Semiconductors Co., Ltd. 2018. All rights reserved Product data sheet 5 September 2018 2 / 12