NXPSC08650B6J WeEn Semiconductor

NXPSC08650B Silicon Carbide Diode 4 January 2017 Product data sheet 1. General description Silicon Carbide Schottky diode in TO263 (D2PAK) plastic package, designed for high frequency switched-mode power supplies. 2. Features and benefits Highly stable switching performance High forward surge capability I FSM Extremely fast reverse recovery time Superior in efficiency to Silicon Diode alternatives Reduced losses in associated MOSFET Reduced EMI Reduced cooling requirements RoHS compliant 3. Applications Power factor correction Telecom/Server SMPS UPS PV inverter PC Silverbox LED/OLED TV Motor Drives 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V repetitive peak reverse - - 650 V RRM voltage I average forward = 0.5 T 119 C square-wave - - 8 A F(AV) mb current pulse Fig. 1 Fig. 2 Fig. 3 Fig. 4 T junction temperature - - 175 C j Static characteristics V forward voltage I = 8 A T = 25 C Fig. 6 - 1.5 1.7 V F F j I = 8 A T = 150 C Fig. 6 - 1.8 2.1 V F j Dynamic characteristics Q recovered charge I = 8 A dI /dt = 500 A/s V = 400 V - 13 - nC r F F R T = 25 C Fig. 7 jWeEn Semiconductors NXPSC08650B Silicon Carbide Diode 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 n.c. not connected K A 001aaa020 2 K cathode 1 3 A anode mb K mounting base connected to cathode TO263N 1 It is not possible to connect to pin 2 of the TO263 package. 6. Ordering information Table 3. Ordering information Type number Package Name Description Version NXPSC08650B - plastic single-ended surface-mounted package (D2PAK) 3 TO263N leads (one lead cropped) NXPSC08650B All information provided in this document is subject to legal disclaimers. WeEn Semiconductors Co., Ltd. 2017. All rights reserved Product data sheet 4 January 2017 2 / 10