WNS40H100CQ WeEn Semiconductor

WNS40H100C Dual power Schottky diode 26 April 2019 Product data sheet 1. General description Dual common cathode power Schottky diode designed for high frequency switched mode power supplies in a TO-220 plastic package. 2. Features and benefits Trench structure High junction temperature up to 150C High efficiency Low forward voltage drop, negligible switching losses 3. Applications DC to DC converters Freewheeling diode OR-ing diode 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V repetitive peak reverse - - 100 V RRM voltage I average forward = 0.5 T 133 C square-wave - - 20 A F(AV) mb current pulse per diode Fig. 1 Fig. 2 Fig. 3 I average output current = 0.5 T 130 C square-wave - - 40 A O(AV) mb pulse both diodes conducting Static characteristics V forward voltage I = 10 A T = 25 C Fig. 6 per diode - 0.53 0.59 V F F j I = 10 A T = 125 C Fig. 6 per diode - 0.49 0.56 V F j I = 20 A T = 25 C Fig. 6 per diode - 0.64 0.71 V F j I = 20 A T = 125 C Fig. 6 per diode - 0.61 0.68 V F j I reverse current V = 100 V T = 25 C Fig. 7 Fig. 8 - - 50 A R R j per diode V = 100 V T = 125 C Fig. 7 Fig. 8 - - 30 mA R j per diodeWeEn Semiconductors WNS40H100C Dual power Schottky diode 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 A1 anode 1 A1 A2 2 K cathode K 3 A2 anode 2 sym125 mb K mounting base connected to cathode TO-220E 6. Ordering information Table 3. Ordering information Type number Package Orderable part number Packing Small packing Package Package Name method quantity version issue date WNS40H100C TO220 WNS40H100CQ Tube 50 TO220E 26-April-2019 WNS40H100C All information provided in this document is subject to legal disclaimers. WeEn Semiconductors Co., Ltd. 2019. All rights reserved Product data sheet 26 April 2019 2 / 11