WNSC08650T6J WeEn Semiconductor

WNSC08650T Silicon Carbide Diode Rev.01 - 18 March 2020 Product data sheet 1. General description Silicon Carbide Schottky diode in a DFN 8*8 plastic package, designed for high frequency alogen-Free RoHS switched-mode power supplies. h Lead-Free 2. Features and benefits Highly stable switching performance High forward surge capability IFSM Extremely fast reverse recovery time Superior in efficiency to Silicon Diode alternatives Reduced losses in associated MOSFET Reduced EMI Reduced cooling requirements RoHS compliant 3. Applications Power factor correction Telecom / Server SMPS UPS PV inverter PC Silverbox LED / OLED TV Motor Drives 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Values Unit Absolute maximum rating V repetitive peak reverse 650 V RRM voltage I average forward current = 0.5 square-wave pulse T 136 C 8 A F(AV) c Fig. 1 Fig. 2 Fig. 3 T junction temperature 175 C j Symbol Parameter Conditions Min Typ Max Unit Static characteristics V forward voltage I = 8 A T = 25 C Fig. 5 - 1.5 1.7 V F F j I = 8 A T = 150 C Fig. 5 - 1.8 2.1 V F j Dynamic characteristics Q recovered charge I = 8 A dI /dt = 500 A/s V = 400 V - 13 - nC r F F R T = 25 C Fig. 7 jWeEn Semiconductors WNSC08650T Silicon Carbide Diode 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 n.c. not connected K A 001aaa020 2 n.c. not connected 5 3 A anode 4 A anode 1 23 4 mounting base connected to 5 K cathode 6. Ordering information Table 3. Ordering information Type number Package Orderable part number Packing Small packing Package Package name method quantity version issue date WNSC08650T DFN8*8 WNSC08650T6J Tape 3000 DFN8X8N 25-Dec-2019 7. Marking Table 4. Marking codes Type number Marking codes WNSC08650T WNSC 08650T WNSC08650T All information provided in this document is subject to legal disclaimers. WeEn Semiconductors Co., Ltd. 2020. All rights reserved Product data sheet 18 March 2020 2 / 11