X-On Electronics has gained recognition as a prominent supplier of W29N01HVBINF TR nand flash across the USA, India, Europe, Australia, and various other global locations. W29N01HVBINF TR nand flash are a product manufactured by Winbond. We provide cost-effective solutions for nand flash, ensuring timely deliveries around the world.

W29N01HVBINF TR

W29N01HVBINF TR electronic component of Winbond
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Part No.W29N01HVBINF TR
Manufacturer: Winbond
Category:NAND Flash
Description: NAND Flash 1G-bit NAND flash, 3V, 4-bit ECC, 3V, x8
Datasheet: W29N01HVBINF TR Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

2500: USD 3.025 ea
Line Total: USD 7562.5

Availability - 0
MOQ: 2500  Multiples: 2500
Pack Size: 2500
Availability Price Quantity
0 - WHS 1


Ships to you between Wed. 05 Jun to Fri. 07 Jun

MOQ : 2500
Multiples : 2500
2500 : USD 2.6335
5000 : USD 2.5185
10000 : USD 2.5185

     
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We proudly offer the W29N01HVBINF TR NAND Flash at competitive prices in the United States, Australia, India, Europe and more. By maintaining strong relationships with manufacturers and optimizing our operations, we provide significant savings to our customers. Customer satisfaction is at the heart of our business. Our knowledgeable and friendly customer service team is always ready to assist you with any inquiries or issues. From product selection to after-sales support, we are dedicated to providing our customers with a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why we are the top choice for the W29N01HVBINF TR NAND Flash.

W29N01HVXINF W29N01HVXINF 1G-BIT 3.3V NAND FLASH MEMORY th Release Date: January 11 , 2018 1 Revision D W29N01HVXINF Table of Contents 1. GENERAL DESCRIPTION ............................................................................................................... 6 2. FEATURES ....................................................................................................................................... 6 3. PACKAGE TYPES AND PIN CONFIGURATIONS .......................................................................... 7 3.1 Pin assignment 48-pin TSOP1(x8) ....................................................................................... 7 3.2 Pin assignment 48 ball VFBGA (x8) ..................................................................................... 8 3.3 Pin assignment 63 ball VFBGA ............................................................................................ 9 3.4 Pin Descriptions .................................................................................................................. 10 4. PIN DESCRITPIONS ...................................................................................................................... 11 4.1 Chip Enable ( CE) .............................................................................................................. 11 4.2 Write Enable ( WE) ............................................................................................................ 11 4.3 Read Enable ( RE) ............................................................................................................ 11 4.4 Address Latch Enable (ALE) .............................................................................................. 11 4.5 Command Latch Enable (CLE) .......................................................................................... 11 4.6 Write Protect ( WP) ............................................................................................................ 11 4.7 Ready/Busy (RY/ BY) ........................................................................................................ 11 4.8 Input and Output (I/Ox) ....................................................................................................... 11 5. BLOCK DIAGRAM .......................................................................................................................... 12 6. MEMORY ARRAY ORGANIZATION .............................................................................................. 13 6.1 Array Organization (x8) ...................................................................................................... 13 7. MODE SELECTION TABLE ........................................................................................................... 14 8. COMMAND TABLE......................................................................................................................... 15 9. DEVICE OPERATIONS .................................................................................................................. 16 9.1 READ operation .................................................................................................................. 16 9.1.1 PAGE READ (00h-30h)......................................................................................................... 16 9.1.2 RANDOM DATA OUTPUT (05h-E0h) ................................................................................... 17 9.1.3 READ ID (90h) ...................................................................................................................... 17 9.1.4 READ PARAMETER PAGE (ECh) ....................................................................................... 18 9.1.5 READ STATUS (70h)............................................................................................................ 21 9.2 PROGRAM operation ......................................................................................................... 22 9.2.1 PAGE PROGRAM (80h-10h) ................................................................................................ 22 9.2.2 SERIAL DATA INPUT (80h) .................................................................................................. 22 9.2.3 RANDOM DATA INPUT (85h) .............................................................................................. 23 9.3 COPY BACK operation....................................................................................................... 24 9.3.1 READ for COPY BACK (00h-35h) ........................................................................................ 24 9.3.2 PROGRAM for COPY BACK (85h-10h) ................................................................................ 24 9.4 BLOCK ERASE operation .................................................................................................. 26 9.4.1 BLOCK ERASE (60h-D0h) .................................................................................................... 26 9.5 RESET operation ................................................................................................................ 27 9.5.1 RESET (FFh) ........................................................................................................................ 27 9.6 WRITE PROTECT .............................................................................................................. 28 10. ELECTRICAL CHARACTERISTICS............................................................................................... 30 10.1 Absolute Maximum Ratings ................................................................................................ 30 10.2 Operating Ranges .............................................................................................................. 30 th Release Date: January 11 , 2018 2 Revision D

Tariff Desc

8542.32.00 32 No ..CMOS and MOS Read Only Memory and Programmable Read Only Memory whether erasable or non-erasable (for example, flash memory, EPROM, E2PROM, EAPROM, NOVRAM, ROM and PROM)
Winbond Elec
WINBOND ELECTRONICS
WINBOND ELECTRONICS CORP AMERICA

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