V 1200 V DS I 25C 10 A D C2M0280120D R 280 m DS(on) Silicon Carbide Power MOSFET TM C2M MOSFET Technology N-Channel Enhancement Mode Features Package High Blocking Voltage with Low On-Resistance High Speed Switching with Low Capacitances Easy to Parallel and Simple to Drive Avalanche Ruggedness Resistant to Latch-Up Halogen Free, RoHS Compliant TO-247-3 Benefits Higher System Efficiency Reduced Cooling Requirements Increased Power Density Increased System Switching Frequency Applications LED Lighting Power Supplies High Voltage DC/DC Converters Part Number Package Industrial Power Supplies HVAC C2M0280120D TO-247-3 Maximum Ratings (T = 25 C unless other wise specified) C Symbol Parameter Value Unit Test Conditions Note Drain - Source Voltage 1200 V V = 0 V, I = 100 A V GS D DSmax Gate - Source Voltage -10/+25 V Absolute maximum values V GSmax V Gate - Source Voltage -5/+20 V Recommended operational values GSop 10 V = 20 V, T = 25 C GS C I Continuous Drain Current A Fig. 19 D 6 V = 20 V, T = 100 C GS C I Pulsed Drain Current 20 A Fig. 22 Pulse width t limited by T D(pulse) jmax P Power Dissipation 62.5 W T =25 C, T = 150 C Fig. 20 P J C D -55 to Operating Junction and Storage Temperature C T , T J stg +150 Solder Temperature 260 C 1.6 mm (0.063) from case for 10s T L 1 Nm Mounting Torque M3 or 6-32 screw M d 8.8 lbf-in 1 C2M0280120D Rev. B, 10-2015 Electrical Characteristics (T = 25C unless other wise specified) C Symbol Parameter Min. Typ. Max. Unit Test Conditions Note V (BR)DSS Drain-Source Breakdown Voltage 1200 V VGS = 0 V, ID = 100 A 2.0 2.6 4 V V = V , I = 1.25mA DS GS D V Gate Threshold Voltage Fig. 11 GS(th) 2.1 V V = V I = 1.25mA, T = 150 C DS GS, D J IDSS Zero Gate Voltage Drain Current 1 100 A VDS = 1200 V, VGS = 0 V IGSS Gate-Source Leakage Current 250 nA VGS = 20 V, VDS = 0 V 280 370 V = 20 V, I = 6 A GS D R Drain-Source On-State Resistance m Fig. 4,5,6 DS(on) 530 V = 20 V, I = 6 A, T = 150 C GS D J 2.8 V = 20 V, I = 6 A DS DS g Transconductance S Fig. 7 fs 2.4 V = 20 V, I = 6 A, T = 150 C DS DS J C Input Capacitance 259 iss V = 0 V GS C Output Capacitance 23 oss pF Fig. 17,18 V = 1000 V DS C Reverse Transfer Capacitance 3 rss f = 1 MHz VAC = 25 mV E C Stored Energy 12.5 J Fig 16 oss oss E Avalanche Energy, Single Pluse 280 mJ I = 6A, V = 50V Fig. 29 AS D DD E Turn-On Switching Energy 32 ON V = 800 V, V = -5/20 V, DS GS J Fig. 25 I = 6A, R = 2.5, L= 412 H E Turn Off Switching Energy 37 D G(ext) OFF t Turn-On Delay Time 5.2 d(on) V = 800 V, V = -5/20 V DD GS I = 6 A, D t Rise Time 7.6 r ns R = 2.5 , R = 133 Fig. 27 G(ext) L td(off ) Turn-Off Delay Time 10.8 Timing relative to V DS Per IEC60747-8-4 pg 83 tf Fall Time 9.9 , R Internal Gate Resistance 11.4 f = 1 MHz V = 25 mV, ESR of C G(int) AC ISS Q Gate to Source Charge 5.6 gs V = 800 V, V = -5/20 V DS GS I = 6 A Qgd Gate to Drain Charge 7.6 nC D Fig. 12 Per IEC60747-8-4 pg 21 Qg Gate Charge Total 20.4 Reverse Diode Characteristics Symbol Parameter Typ. Max. Unit Test Conditions Note 3.3 V V = - 5 V, I = 3 A GS SD Fig. 8, V Diode Forward Voltage SD 9, 10 3.1 V V = - 5 V, I = 3 A, T = 150 C GS SD J IS Continuous Diode Forward Current 10 A TC = 25C Note 1 t Reverse Recovery time 24 ns rr V = - 5 V, I = 6 A, V = 800 V GS SD R Note 1 dif/dt = 1000 A/s Q Reverse Recovery Charge 70 nC rr I Peak Reverse Recovery Current 4 A rrm Note (1): When using SiC Body Diode the maximum recommended V = -5V GS Thermal Characteristics Symbol Parameter Typ. Max. Unit Test Conditions Note R Thermal Resistance from Junction to Case 1.8 2.0 JC C/W Fig. 21 R Thermal Resistance from Junction to Ambient 40 JC 2 C2M0280120D Rev. B, 10-2015