V 900 V DS C3M0065090J I 25C 35 A D R 65 m Silicon Carbide Power MOSFET DS(on) TM C3M MOSFET Technology N-Channel Enhancement Mode Features Package TAB New C3M SiC MOSFET technology Drain New low impedance package with driver source pin High blocking voltage with low On-resistance Fast intrinsic diode with low reverse recovery (Qrr) Low output capacitance (60pF) Halogen free, RoHS compliant Wide creepage (~7mm) between drain and source Drain Benefits (TAB) 1 2 3 4 5 6 7 G DS S S S S S Reduce switching losses and minimize gate ringing Higher system efficiency Increase power density Increase system switching frequency Gate (Pin 1) Driver Power Applications Source Source (Pin 2) (Pin 3,4,5,6,7) Renewable energy EV battery chargers High voltage DC/DC converters Part Number Package Switch Mode Power Supplies C3M0065090J TO-263-7 Maximum Ratings (T = 25 C unless otherwise specified) C Symbol Parameter Value Unit Test Conditions Note Drain - Source Voltage 900 V V = 0 V, I = 100 A V GS D DSmax V Gate - Source Voltage (dynamic) -8/+19 V AC (f >1 Hz) Note. 1 GSmax V Gate - Source Voltage (static) -4/+15 V Static Note. 2 GSop 35 Fig. 19 V = 15 V, T = 25C GS C I Continuous Drain Current A D 22 V = 15 V, T = 100C GS C I Pulsed Drain Current 90 A Fig. 22 D(pulse) Pulse width t limited by T jmax P Avalanche energy, Single pulse 110 mJ I = 22A, V = 50V E D DD AS P Power Dissipation 113 W T =25C, T = 150 C Fig. 20 C J D -55 to Operating Junction and Storage Temperature C T , T J stg +150 T Solder Temperature 260 C 1.6mm (0.063) from case for 10s L Note (1): When using MOSFET Body Diode V = -4V/+19V GSmax Note (2): MOSFET can also safely operate at 0/+15 V 1 C3M0065090J Rev. D, 06-2019Electrical Characteristics (T = 25C unless otherwise specified) C Symbol Parameter Min. Typ. Max. Unit Test Conditions Note V Drain-Source Breakdown Voltage 900 V V = 0 V, I = 100 A (BR)DSS GS D 1.8 2.1 3.5 V VDS = VGS, ID = 5 mA V Gate Threshold Voltage Fig. 11 GS(th) 1.6 V V = V , I = 5 mA, T = 150C DS GS D J I Zero Gate Voltage Drain Current 1 100 A V = 900 V, V = 0 V DSS DS GS I Gate-Source Leakage Current 10 250 nA V = 15 V, V = 0 V GSS GS DS 65 78 VGS = 15 V, ID = 20 A Fig. 4, R Drain-Source On-State Resistance m DS(on) 5, 6 90 V = 15 V, I = 20A, T = 150C GS D J 16 V = 15 V, I = 20 A DS DS g Transconductance S Fig. 7 fs 13 V = 15 V, I = 20 A, T = 150C DS DS J C Input Capacitance 760 iss Fig. 17, V = 0 V, V = 600 V GS DS C Output Capacitance 66 oss pF 18 f = 1 MHz C Reverse Transfer Capacitance 5 rss VAC = 25 mV Eoss Coss Stored Energy 16 J Fig. 16 Fig. 26, EON Turn-On Switching Energy (Body Diode FWD) 42 V = 400 V, V = -4 V/15 V, I = 20 A, DS GS D J 30 R = 2.5 , L= 65.7 H, T = 150C J G(ext) Note. 3 EOFF Turn Off Switching Energy (Body Diode FWD) 6 t Turn-On Delay Time 7 d(on) VDD = 400 V, VGS = -4 V/15 V t Rise Time 8 r ID = 20 A, RG(ext) = 2.5 , ns Fig. 27 Timing relative to V DS td(off) Turn-Off Delay Time 13 Inductive load tf Fall Time 4 , R Internal Gate Resistance 3.5 f = 1 MHz V = 25 mV G(int) AC Qgs Gate to Source Charge 9 V = 400 V, V = -4 V/15 V DS GS Qgd Gate to Drain Charge 9 ID = 20 A nC Fig. 12 Per IEC60747-8-4 pg 21 Q Total Gate Charge 30 g (T = 25C unless otherwise specified) Reverse Diode Characteristics C Symbol Parameter Typ. Max. Unit Test Conditions Note 4.4 V V = -4 V, I = 10 A GS SD Fig. 8, V Diode Forward Voltage SD 9, 10 4.0 V V = -4 V, I = 10 A, T = 150 C GS SD J I Continuous Diode Forward Current 22 A V = -4 V Note 1 S GS I Diode pulse Current 90 A Note 1 S, pulse V = -4 V, pulse width t limited by T jmax GS P t Reverse Recovery time 8 ns rr V = -4 V, I = 20 A, V = 500 V GS SD R Note 1 Q Reverse Recovery Charge 215 nC rr dif/dt = 5400 A/s, T = 150 C J I Peak Reverse Recovery Current 32 A rrm Thermal Characteristics Test Conditions Note Symbol Parameter Max. Unit RJC Thermal Resistance from Junction to Case 1.1 C/W Fig. 21 R Thermal Resistance From Junction to Ambient 40 JA Note (3): Turn-off and Turn-on switching energy and timing values measured using SiC MOSFET Body Diode 2 C3M0065090J Rev. D, 06-2019