V 900 V DS I 25C 11 A C3M0280090J D R 280 m DS(on) Silicon Carbide Power MOSFET TM C3M MOSFET Technology N-Channel Enhancement Mode Features Package New C3M SiC MOSFET technology High blocking voltage with low On-resistance High speed switching with low capacitances New low impedance package with driver source Fast intrinsic diode with low reverse recovery (Qrr) Halogen free, RoHS compliant Wide creepage (~7mm) between drain and source Bene ts Higher system ef ciency Reduced cooling requirements Increased power density Increased system switching frequency Applications Renewable energy Lighting High voltage DC/DC converters Telecom Power Supplies Part Number Package Induction Heating C3M0280090J TO-263-7 Maximum Ratings (T = 25 C unless otherwise speci ed) C Symbol Parameter Value Unit Test Conditions Note Drain - Source Voltage 900 V V = 0 V, I = 100 A V GS D DSmax Gate - Source Voltage -8/+18 V Absolute maximum values V GSmax Gate - Source Voltage -4/+15 V Recommended operational values Note (1) V GSop 11 Fig. 19 V = 15 V, T = 25C GS C I Continuous Drain Current A D 7 V = 15 V, T = 100C GS C I Pulsed Drain Current 22 A Fig. 22 Pulse width t limited by T D(pulse) jmax P P Power Dissipation 50 W T =25C, T = 150 C Fig. 20 C J D -55 to Operating Junction and Storage Temperature C T , T J stg +150 Solder Temperature 260 C 1.6mm (0.063) from case for 10s T L Note (1): MOSFET can also safely operate at 0/+15 V 1 C3M0280090J Rev. A 01-2018Electrical Characteristics (T = 25C unless otherwise speci ed) C Symbol Parameter Min. Typ. Max. Unit Test Conditions Note V Drain-Source Breakdown Voltage 900 V V = 0 V, I = 100 A (BR)DSS GS D 1.8 2.1 3.5 V VDS = VGS, ID = 1.2 mA V Gate Threshold Voltage Fig. 11 GS(th) 1.6 V V = V , I = 1.2 mA, T = 150C DS GS D J I Zero Gate Voltage Drain Current 1 100 A V = 900 V, V = 0 V DSS DS GS I Gate-Source Leakage Current 10 250 nA V = 15 V, V = 0 V GSS GS DS 280 360 VGS = 15 V, ID = 7.5 A Fig. 4, R Drain-Source On-State Resistance m DS(on) 5, 6 385 VGS = 15 V, ID = 7.5 A, TJ = 150C 3.6 V = 15 V, I = 7.5 A DS DS g Transconductance S Fig. 7 fs 3.1 V = 15 V, I = 7.5 A, T = 150C DS DS J Ciss Input Capacitance 150 Fig. 17, VGS = 0 V, VDS = 600 V C Output Capacitance 20 oss pF 18 f = 1 MHz C Reverse Transfer Capacitance 2 rss AC V = 25 mV E C Stored Energy 4.5 J Fig. 16 oss oss Fig. 26, E Turn-On Switching Energy 19 ON V = 400 V, V = -4 V/15 V, I = 7.5 A, DS GS D J 29 R = 2.5 , L= 220 H, T = 150C J G(ext) E Turn Off Switching Energy 3.7 Note(3) OFF td(on) Turn-On Delay Time 10.5 V = 400 V, V = -4 V/15 V DD GS Fig. 27, tr Rise Time 6.5 I = 7.5 A, R = 2.5 , D G(ext) ns 29 Timing relative to V DS t Turn-Off Delay Time 11 Note(3) d(off) Inductive load t Fall Time 4 f , R Internal Gate Resistance 26 f = 1 MHz V = 25 mV G(int) AC Q Gate to Source Charge 2.8 gs VDS = 400 V, VGS = -4 V/15 V Q Gate to Drain Charge 3.4 I = 7.5 A gd nC D Fig. 12 Per IEC60747-8-4 pg 21 Qg Total Gate Charge 9.5 (T = 25C unless otherwise speci ed) Reverse Diode Characteristics C Test Conditions Note Symbol Parameter Typ. Max. Unit 4.8 V V = -4 V, I = 4 A GS SD Fig. 8, 9, V Diode Forward Voltage SD 10 4.4 V V = -4 V, I = 4 A, T = 150 C GS SD J I Continuous Diode Forward Current 9 A V = -4 V Note (2) S GS I Diode pulse Current 22 A Note (2) S, pulse V = -4 V, pulse width t limited by T jmax GS P t Reverse Recover time 20 ns rr V = -4 V, I = 7.5 A, V = 400 V GS SD R Note (2) Q Reverse Recovery Charge 47 nC rr dif/dt = 600 A/s, T = 150 C J I Peak Reverse Recovery Current 3.4 A rrm Note (2): When using SiC Body Diode the maximum recommended V = -4V GS Thermal Characteristics Symbol Parameter Max. Unit Test Conditions Note R Thermal Resistance from Junction to Case 2.5 JC C/W Fig. 21 RJA Thermal Resistance From Junction to Ambient 40 2 C3M0280090J Rev. A 01-2018