V 1000 V DS I 25C 22 A D C3M0120100J R 120 m DS(on) Silicon Carbide Power MOSFET TM C3M MOSFET Technology N-Channel Enhancement Mode Features Package TAB TM C3M SiC MOSFET technology Drain Low parasitic inductance with separate driver source pin 7mm of creepage distance between drain and source High blocking voltage with low On-resistance Fast intrinsic diode with low reverse recovery (Qrr) Low output capacitance (60pF) Halogen free, RoHS compliant Benefits Drain 1 2 3 4 5 6 7 (TAB) G KS S S S S S Reduce switching losses and minimize gate ringing Higher system efficiency Reduce cooling requirements Increase power density Gate Increase system switching frequency (Pin 1) Driver Power Applications Source Source (Pin 2) (Pin 3,4,5,6,7) Renewable energy EV battery chargers High voltage DC/DC converters Marking Part Number Package Switch Mode Power Supplies C3M0120100J TO-263-7 C3M0120100J Maximum Ratings (T = 25 C unless other wise specified) C Symbol Parameter Value Unit Test Conditions Note Drain - Source Voltage 1000 V V = 0 V, I = 100 A V GS D DSmax Gate - Source Voltage (dynamic) -8/+19 V AC (f >1 Hz) Note: 1 V GSmax Gate - Source Voltage (static) -4/+15 V Static Note: 2 V GSop 22 Fig. 19 V = 15 V, T = 25C GS C I Continuous Drain Current A D 13.5 V = 15 V, T = 100C GS C I Pulsed Drain Current 50 A Fig. 22 Pulse width t limited by T D(pulse) jmax P P Power Dissipation 83 W T =25C, T = 150 C Fig. 20 C J D -55 to Operating Junction and Storage Temperature C T , T J stg +150 Solder Temperature 260 C 1.6mm (0.063) from case for 10s T L Note (1): When using MOSFET Body Diode V = -4V/+19V GSmax Note (2): MOSFET can also safely operate at 0/+15 V 1 C3M0120100J Rev. -, 04-2017Electrical Characteristics (T = 25C unless other wise specified) C Typ. Symbol Parameter Min. Max. Unit Test Conditions Note V Drain-Source Breakdown Voltage 1000 V V = 0 V, I = 100 A (BR)DSS GS D 1.8 2.1 3.5 V VDS = VGS, ID = 3 mA V Gate Threshold Voltage Fig. 11 GS(th) 1.6 V V = V , I = 3 mA, T = 150C DS GS D J I Zero Gate Voltage Drain Current 1 100 A V = 1000 V, V = 0 V DSS DS GS I Gate-Source Leakage Current 10 250 nA V = 15 V, V = 0 V GSS GS DS 120 155 VGS = 15 V, ID = 15 A Fig. 4, R Drain-Source On-State Resistance m DS(on) 5, 6 170 VGS = 15 V, ID = 15 A, TJ = 150C 7.7 V = 20 V, I = 15 A DS DS g Transconductance S Fig. 7 fs 6.7 V = 20 V, I = 15 A, T = 150C DS DS J Ciss Input Capacitance 350 Fig. 17, VGS = 0 V, VDS = 600 V C Output Capacitance 40 oss pF 18 f = 1 MHz C Reverse Transfer Capacitance 3 rss AC V = 25 mV E C Stored Energy 9 J Fig. 16 oss oss E Turn-On Switching Energy (Body Diode FWD) 140 ON V = 700 V, V = -4 V/15 V, I = 15A, DS GS D J Fig. 26 R = 2.5, L= 156 H, T = 150C J G(ext) E Turn Off Switching Energy (Body Diode FWD) 25 OFF td(on) Turn-On Delay Time 7 V = 700 V, V = -4 V/15 V DD GS tr Rise Time 8 I = 15 A, R = 2.5 , D G(ext) Fig. 27, ns Timing relative to V 28 DS t Turn-Off Delay Time 14 d(off) Inductive load t Fall Time 8 f , R Internal Gate Resistance 16 f = 1 MHz V = 25 mV G(int) AC Q Gate to Source Charge 4.8 gs V = 700 V, V = -4 V/15 V DS GS Q Gate to Drain Charge 10.0 I = 15 A gd nC D Fig. 12 Per IEC60747-8-4 pg 21 Q Total Gate Charge 21.5 g (T = 25C unless other wise specified) Reverse Diode Characteristics C Symbol Parameter Typ. Max. Unit Test Conditions Note 4.8 V V = -4 V, I = 7.5 A GS SD Fig. 8, V Diode Forward Voltage SD 9, 10 4.4 V V = -4 V, I = 7.5 A, T = 150 C GS SD J I Continuous Diode Forward Current 16.5 A V = -4 V Note 1 S GS I Diode pulse Current 50 A Note 1 S, pulse V = -4 V, pulse width t limited by T jmax GS P t Reverse Recover time 16 ns rr V = -4 V, I = 15 A, V = 700 V GS SD R Note 1 Q Reverse Recovery Charge 154 nC rr dif/dt = 2400 A/s, T = 150 C J I Peak Reverse Recovery Current 15 A rrm Thermal Characteristics Symbol Parameter Max. Unit Test Conditions Note R Thermal Resistance from Junction to Case 1.5 JC C/W Fig. 21 RJA Thermal Resistance From Junction to Ambient 40 2 C3M0120100J Rev. -, 04-2017