The IXFA110N15T2 is an IGBT transistor module manufactured by IXYS. This module is designed to provide high power switching and high-speed switching capabilities in a small profile package. It has an insulated-gate bipolar transistor (IGBT) with a peak collector-emitter voltage of 15V and a current rating of 155A peak (110A RMS). This IGBT module also features a fast-switching TJ of 150 to 175°C and is designed to have a low saturation voltage. The module has a 175A surge rated latch current and is protected against short circuits, coil-to-coil short circuits, and over temperature protection.