C5D50065D V = 650 V RRM Silicon Carbide Schottky Diode I (T =130C) = 50 A C F Z -Rec Rectifier Q = 110 nC c Features Package 650-Volt Schottky Rectifier Zero Reverse Recovery Current Zero Forward Recovery Voltage High-Frequency Operation Temperature-Independent Switching Behavior Extremely Fast Switching Positive Temperature Coefficient on V F TO-247-3 Benefits Replace Bipolar with Unipolar Rectifiers Essentially No Switching Losses Higher Efficiency Reduction of Heat Sink Requirements Parallel Devices Without Thermal Runaway Applications Part Number Package Marking Solar Inverters Motor Drives C5D50065D TO-247-3 C5D50065 EV Chargers UPS Automotive Maximum Ratings (T = 25C unless otherwise specified) C Symbol Parameter Value Unit Test Conditions Note V Repetitive Peak Reverse Voltage 650 V RRM V Surge Peak Reverse Voltage 650 V RSM V DC Peak Blocking Voltage 650 V DC 100 T =25C C Fig. 3 I Continuous Forward Current 50 A T =130C F C 46 T =135C C 153 T =25C, t =10 ms, Half Sine Pulse C P I Repetitive Peak Forward Surge Current A FRM 106 T =110C, t =10 ms, Half Sine Pulse C P 400 T =25C, t =10 ms, Half Sine Pulse C P I Non-Repetitive Forward Surge Current A Fig. 8 FSM 330 T =110C, t =10 ms, Half Sine Pulse C P 2000 T =25C, t =10 m s, Pulse C P Fig. 8 I Non-Repetitive Peak Forward Current A F,Max 1600 T =110C, t =10 m s, Pulse C P 300 T =25C C P Power Dissipation W Fig. 4 tot 130 T =110C C 800 T =25C, t =10 ms 2 2 2 C P i dt i t value (Per Leg) A s 545 T =110C, t =10 ms C P Operating Junction and Storage -55 to T , T C J stg Temperature +175 1 Nm M3 Screw TO-247 Mounting Torque 8.8 lbf-in 6-32 Screw 1 C5D50065D Rev. B, 05-2017Electrical Characteristics Symbol Parameter Typ. Max. Unit Test Conditions Note 1.5 1.8 I = 50 A T =25C F J I = 25 A T =25C 1.25 F J V Forward Voltage V Fig. 1 F I = 50 A T =175C 1.8 2.2 F J I = 25 A T =175C 1.3 F J V = 650 V , T =25C 50 500 R J 4 V = 400 V , T =25C R J I Reverse Current A Fig. 2 R 200 1000 V = 650 V , T =175C R J 6 V = 400 V , T =175C R J V = 400 V, I = 50 A R F Q Total Capacitive Charge 110 nC di /dt = 500 A/s Fig. 5 C T = 25C J 1970 V = 0 V, T = 25C, f = 1 MHz R J C Total Capacitance 200 pF V = 200 V, T = 25C, f = 1 MHz Fig. 6 R J 180 V = 400 V, T = 25C, f = 1 MHz R J E Capacitance Stored Energy 16.5 J V = 400 V Fig. 7 C R Note: This is a majority carrier diode, so there is no reverse recovery charge. Thermal Characteristics Symbol Parameter Typ. Unit R Thermal Resistance from Junction to Case 0.5 C/W JC Typical Performance 100 0.45 0.40 0.35 75 T = 175 C J 0.30 T = 175 C J T = 125 C J 0.25 T = 125 C J 50 0.20 T = 75 C T = 75 C J J 0.150.15 T = 25 C J T = 25 C J 25 0.10 T = -55 C J T = -55 C J 0.05 0 0.00 0 0.5 1 1.5 2 2.5 3 3.5 4 0 100 200 300 400 500 600 700 Foward Voltage, V (V) Reverse Voltage, V (V) V Forward Voltage (V) V Reverse Voltage (V) F R R F Figure 1. Forward Characteristics Figure 2. Reverse Characteristics 2 C5D50065D Rev. B, 05-2017 FFoowawarrdd CCuurrrreenntt,, II (A) I Forward Current (A)F F RReevveerrssee LLeeaakkaaggee CCuurrrreenntt,, II (mA) I Reverse Voltage (mA) RR R