C4D20120H V = 1200 V RRM Silicon Carbide Schottky Diode I (T =135C) = 26 A F C Z -Rec Rectifier Q = 99 nC c Features Package 1.2kV Schottky Rectifier Zero Reverse Recovery Current High-Frequency Operation Temperature-Independent Switching Extremely Fast Switching Positive Temperature Coefficient on V F Increased Creepage/Clearance Distance TO-247-2 Benefits PIN 1 Replace Bipolar with Unipolar Rectifiers CASE Essentially No Switching Losses PIN 2 Higher Efficiency Reduction of Heat Sink Requirements Parallel Devices Without Thermal Runaway Applications Part Number Package Marking Switch Mode Power Supplies (SMPS) C4D20120H TO-247-2 C4D20120 Boost diodes in PFC or DC/DC stages Free Wheeling Diodes in Inverter stages AC/DC converters Maximum Ratings (T =25C unless otherwise specified) C Symbol Parameter Value Unit Test Conditions Note V Repetitive Peak Reverse Voltage 1200 V RRM V Surge Peak Reverse Voltage 1300 V RSM V DC Peak Reverse Voltage 1200 V R 54 T =25C C I Continuous Forward Current 26 A T =135C Fig. 3 F C 20 T =156C C 86 T =25C, t =10 ms, Half Sine Pulse C P I Repetitive Peak Forward Surge Current A FRM 56 T =110C, t =10 ms, Half Sine Pulse C P 130 T =25C, t =10 ms, Half Sine Pulse C P I Non-Repetitive Forward Surge Current A Fig. 8 FSM 104 T =110C, t =10 ms, Half Sine Pulse C P 1150 T =25C, t =10 m s, Pulse C P I Non-Repetitive Peak Forward Current A Fig. 8 F,Max 950 T =110C, t =10 m s, Pulse C P 246 T =25C C P Power Dissipation W Fig. 4 tot 106.5 T =110C C dV/dt Diode dV/dt ruggedness 200 V/ns V =0-960V R 84.5 T =25C, t =10 ms 2 2 2 C P i dt i t value A s 54 T =110C, t =10 ms C P -55 to T , T Operating Junction and Storage Temperature C J stg +175 1 Nm M3 Screw TO-247 Mounting Torque 8.8 lbf-in 6-32 Screw 1 C4D20120H Rev. -, 02-2018Electrical Characteristics Symbol Parameter Typ. Max. Unit Test Conditions Note 1.5 1.8 I = 20 A T =25C F J V Forward Voltage V Fig. 1 F 2.2 3 I = 20 A T =175C F J 35 200 V = 1200 V T =25C R J I Reverse Current A Fig. 2 R 65 400 V = 1200 V T =175C R J V = 800 V, I = 20A R F Q Total Capacitive Charge 99 nC di /dt = 200 A/s Fig. 5 C T = 25C J 1500 V = 0 V, T = 25C, f = 1 MHz R J C Total Capacitance 93 pF V = 400 V, T = 25C, f = 1 MHz Fig. 6 R J 67 V = 800 V, T = 25C, f = 1 MHz R J E Capacitance Stored Energy 28 J V = 800 V Fig. 7 C R Note: This is a majority carrier diode, so there is no reverse recovery charge. Thermal Characteristics Symbol Parameter Typ. Unit Note R Thermal Resistance from Junction to Case 0.61 C/W Fig. 9 JC Typical Performance 40 1 T =-55C J 0.9 35 T = 25C J T = 75C J T =125C 0.8 J T =175C 30 J 0.7 25 0.6 20 0.5 0.4 15 T =-55C 0.3 J T = 25C J 10 T = 75C J 0.2 T =125C J T =175C J 5 0.1 0 0 0 1 2 3 4 0 500 1000 1500 V (V) V (V) F R Figure 1. Forward Characteristics Figure 2. Reverse Characteristics 2 C4D20120H Rev. -, 02-2018 I (A) F I (mA) R