C6D04065A V = 650 V RRM Silicon Carbide Schottky Diode I (T =160C) = 4 A F C Z -Rec Rectifier Q = 16 nC c Features Package th New 6 Generation Technology Low Forward Voltage Drop (V ) F Zero Reverse Recovery Current Zero Forward Recovery Voltage Low Leakage Current (I ) r Temperature-Independent Switching Behavior Positive Temperature Coefficient on V F TO-220-2 Benefits PIN 1 Higher System Level Efficiency CASE Increase System Power Density PIN 2 Reduction of Heat Sink Requirements Parallel Devices Without Thermal Runaway Applications Part Number Package Marking Switch Mode Power Supplies (SMPS) C6D04065A TO-220-2 C6D04065 Server/Telecom Power Supplies Industrial Power Supplies Solar UPS Maximum Ratings (T = 25 C unless otherwise specified) C Symbol Parameter Value Unit Test Conditions Note V Repetitive Peak Reverse Voltage 650 V RRM V DC Blocking Voltage 650 V DC 18 T =25C C I Continuous Forward Current 9 A T =125C Fig. 3 F C 4 T =160C C 19 T =25C, t = 10 ms, Half Sine Wave C P I Repetitive Peak Forward Surge Current A FRM 12 T =110C, t =10 ms, Half Sine Wave C P 32 T =25C, t = 10 ms, Half Sine Wave C p I Non-Repetitive Peak Forward Surge Current A Fig. 8 FSM 28 T =110C, t = 10 ms, Half Sine Wave C p 290 T =25C, t = 10 s, Pulse C P I Non-Repetitive Peak Forward Surge Current A Fig. 8 F,Max 200 T =110C, t = 10 s, Pulse C P 60 T =25C C P Power Dissipation W Fig. 4 tot 26 T =110C C -55 to T , T Operating Junction and Storage Temperature C J stg +175 1 Nm M3 Screw TO-220 Mounting Torque 8.8 lbf-in 6-32 Screw C6D04065A, Rev. -, 10-2019 1Electrical Characteristics Symbol Parameter Typ. Max. Unit Test Conditions Note 1.27 1.50 I = 4 A T =25C F J V Forward Voltage V Fig. 1 F 1.37 1.60 I = 4 A T =175C F J 2 20 V = 650 V T =25C R J I Reverse Current A Fig. 2 R 12 80 V = 650 V T =175C R J V = 400 V, I = 4 A R F Q Total Capacitive Charge 16 nC Fig. 5 C T = 25C J 256 V = 0 V, T = 25C, f = 1 MHz R J C Total Capacitance 32 pF V = 200 V, T = 25C, f = 1 MHz Fig. 6 R J 27 V = 400 V, T = 25C, f = 1 MHz R J E Capacitance Stored Energy 2.6 J V = 400 V Fig. 7 C R Note: This is a majority carrier diode, so there is no reverse recovery charge. Thermal Characteristics Symbol Parameter Typ. Unit Note R Thermal Resistance from Junction to Case 2.5 C/W Fig. 9 JC Typical Performance 100 12 T = -55C J 10 T = 25C J 80 T = 75C J T = 125C J 8 T = 175C J 60 T = 175 C J 6 T = 125 C J 40 T = 75 C J 4 T = 25 C J 20 2 T = -55 C J 0 0 0.5 1.0 1.5 2.0 2.5 0 100 200 300 400 500 600 700 800 FowarVd V (V)oltage, V (V) V (V) VV (V) (V) V (V) F Reverse Voltage, V (V) FF VV (V) (V) R F F R RR Figure 1. Forward Characteristics Figure 2. Reverse Characteristics C6D04065A, Rev. -, 10-2019 2 Foward Current, I (A) F IIII (A)I (A) (A) (A) (A) FFFF F Reverse Leakage Current, I (uA) RR II ( (mmA)A) I ( mA) RR R