EMITTER DXTA42 NPN SURFACE MOUNT TRANSISTOR Features Mechanical Data Epitaxial Planar Die Construction Case: SOT89-3L Complementary PNP Type Available (DXTA92) Case Material: Molded Plastic,Green Molding Compound. UL Flammability Classification Rating 94V-0 Ideally Suited for Automated Assembly Processes Moisture Sensitivity: Level 1 per J-STD-020C Ideal for Medium Power Switching or Amplification Applications Terminals: Finish Matte Tin annealed over Copper leadframe Lead Free By Design/RoHS Compliant (Note 1) (Lead Free Plating). Solderable per MIL-STD-202, Method 208 Gree Device (Note 2) Marking & Type Code Information: See Page 3 Ordering Information: See Page 3 Weight: 54.8mg (approximate) 2,4 1 3 Top View Pin Out Configuration Device Schematic Maximum Ratings T = 25C unless otherwise specified A Characteristic Symbol Value Unit Collector-Base Voltage 300 V V CBO Collector-Emitter Voltage 300 V V CEO Emitter-Base Voltage V 6 V EBO Continuous Collector Current I 500 mA C Thermal Characteristics Characteristic Symbol Value Unit 1 W Power Dissipation (Note 3) T = 25C P A D Thermal Resistance, Junction to Ambient (Note 3) R 125 C/W JA Operating and Storage Temperature Range T , T -55 to +150 C J STG Electrical Characteristics T = 25C unless otherwise specified A Characteristic Symbol Min Typ Max Unit Test Conditions OFF CHARACTERISTICS (Note 4) Collector-Base Breakdown Voltage 300 V V I = 100A, I = 0 (BR)CBO C E Collector-Emitter Breakdown Voltage 300 V V I = 1mA, I = 0 (BR)CEO C B Emitter-Base Breakdown Voltage 6 V V I = 100A, I = 0 (BR)EBO E C Collector Cut-off Current I 0.1 A V = 200V, I = 0 CBO CB E Emitter Cut-off Current I 0.1 A V = 6V, I = 0 EBO EB C ON CHARACTERISTICS (Note 4) Collector-Emitter Saturation Voltage V 0.5 V I = 20mA, I = 2mA CE(SAT) C B Base-Emitter Saturation Voltage V 0.9 V I = 20mA, I = 2mA BE(SAT) C B I = 1mA, V = 10V 25 C CE Static Forward Current Transfer Ratio 40 h I = 10mA, V = 10V FE C CE 40 I = 30mA, V = 10V C CE SMALL SIGNAL CHARACTERISTICS I = 10mA, V = 20V, C CE Transition Frequency 50 MHz f T f = 100MHz Output Capacitance C 3 pF V = 20V, f = 1MHz obo CB Notes: 1. No purposefully added lead. 2. Diodes Inc. sGree policy can be found on our website at DXTA42 R = 125C JA 0.5 0.4 0.3 0.2 0.1 0 0.01 0.1 1 10 100 1,000 I , COLLECTOR CURRENT (mA) C Fig. 4 Collector-Emitter Saturation Voltage vs. Collector Current 2 of 4 December 2009 DXTA42 Diodes Incorporated www.diodes.com Document number: DS31158 Rev. 4 - 2 V , COLLECTOR-EMITTER CE(SAT) SATURATION VOLTAGE (V)