Product Information

PMDT290UNE

PMDT290UNE electronic component of Nexperia

Datasheet
MOSFET, N CH, DUAL, 20V, 800MA, SOT666
Manufacturer: Nexperia
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

5: USD 0.6447 ea
Line Total: USD 3.22

0 - Global Stock
MOQ: 5  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
0 - WHS 1


Ships to you between Mon. 13 May to Fri. 17 May

MOQ : 5
Multiples : 1

Stock Image

PMDT290UNE
Nexperia

5 : USD 0.6447
10 : USD 0.4575
100 : USD 0.2055
500 : USD 0.1694
1000 : USD 0.1333
5000 : USD 0.1116

Read More Specifications

     
Manufacturer
Product Category
Transistor Polarity
Brand
Continuous Drain Current Id
Drain Source Voltage Vds
On Resistance Rdson
Rdson Test Voltage Vgs
Threshold Voltage Vgs
Power Dissipation Pd
Transistor Case Style
No. Of Pins
Operating Temperature Max
Msl
Svhc
Operating Temperature Min
Operating Temperature Range
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Additional Infomation About Product

PMDT290UNE 20 V, 800 mA dual N-channel Trench MOSFET Rev. 1 13 September 2011 Product data sheet 1. Product profile 1.1 General description Dual N-channel enhancement mode Field-Effect Transistor (FET) in an ultra small and flat lead SOT666 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits Very fast switching ESD protection up to 2 kV Trench MOSFET technology AEC-Q101 qualified 1.3 Applications Relay driver Low-side loadswitch High-speed line driver Switching circuits 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit Per transistor V drain-source voltage T=25C --20 V DS j V gate-source voltage -8 - 8 V GS 1 I drain current V =4.5 V T =25C - - 800 mA D GS amb Static characteristics (per transistor) R drain-source on-state V =4.5 V I = 500 mA T = 25 C - 290 380 m DSon GS D j resistance 2 1 Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 1 cm . SOT666PMDT290UNE NXP Semiconductors 20 V, 800 mA dual N-channel Trench MOSFET 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1S1 source TR1 6 5 4 D1 D2 2 G1 gate TR1 3D2 drain TR2 G1 G2 4S2 source TR2 5 G2 gate TR2 12 3 6D1 drain TR1 SOT666 S1 S2 017aaa256 3. Ordering information Table 3. Ordering information Type number Package Name Description Version PMDT290UNE - plastic surface-mounted package 6 leads SOT666 4. Marking Table 4. Marking codes Type number Marking code PMDT290UNE AE 5. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit Per transistor V drain-source voltage T =25C - 20 V DS j V gate-source voltage -8 8 V GS 1 I drain current V =4.5 V T =25C - 800 mA D GS amb 1 V =4.5 V T =100 C - 500 mA GS amb I peak drain current T = 25 C single pulse t 10 s - 3.2 A DM amb p 2 P total power dissipation T =25C - 330 mW tot amb 1 - 390 mW T = 25 C - 1090 mW sp Per device 2 P total power dissipation T =25C - 500 mW tot amb T junction temperature -55 150 C j T ambient temperature -55 150 C amb PMDT290UNE All information provided in this document is subject to legal disclaimers. NXP B.V. 2011. All rights reserved. Product data sheet Rev. 1 13 September 2011 2 of 16

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Nexperia may also be referenced as

Nexperia
NEXPERIA USA INC
Nexperia USA Inc.

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