About IGBT Transistors

IGBT Transistors

An IGBT (Insulated Gate Bipolar Transistor) is a semiconductor device that combines the high switching speed of a metal-oxide-semiconductor field-effect transistor (MOSFET) and the high-current and low-saturation-voltage capability of a bipolar junction transistor (BJT). It is used in inverters, power converters, motor drives, and other power electronic applications. An IGBT has an isolated gate electrode, allowing it to be driven either by voltage or current. When operating, the gate voltage is applied to the gate electrode to control the current flow through the device. Due to its versatile design and high switching speed, it is the most commonly used power switch in most power applications.

IGBT Transistors

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(Ex. GST)(▲▼)		Enter Qty ConfigurationCollector- Emitter Voltage VCEO MaxCollector-Emitter Saturation VoltageMaximum Gate Emitter VoltageContinuous Collector Current at 25 CGate-Emitter Leakage CurrentPower DissipationQualificationPackage / CasePackagingTechnologyMounting StylePd - Power DissipationMinimum Operating TemperatureMaximum Operating TemperatureSeries
  
                    
WG50N65DHWQ


IGBT Transistors WG50N65DHW/TO-247/STANDARD MARKING * HORIZONTAL, RAIL PACK
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

WeEn Semiconductor 6381
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between Mon. 29 Apr to Wed. 01 May Calender.png

USD 2.1202
Multiples of: 1

        TO - 247Tube SMD/SMT   WNSC2D
RGT16BM65DTL


IGBT Transistors ROHM's IGBT products will contribute to energy saving high efficiency and a wide range of high voltage and high-current applications.
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ROHM 5981
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USD 1.0692
Multiples of: 1

Single650 V1.65 V30 V16 A200 nA  TO - 252 - 3Cut TapeSiSmd/Smt94 W- 40 C+ 175 C 
FGP10N60UNDF


IGBT Transistors 600V 10A NPT IGBT
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ON Semiconductor 5626
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USD 0.7696
Multiples of: 1

Single600 V2.3 V+/- 20 V20 A+/- 10 uA139 W TO - 220TubeSiThrough Hole139 W- 55 C+ 150 CFgp10n60undf
IGW30N60H3FKSA1


IGBT Transistors HOME APPLIANCES 14
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Infineon 5585
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USD 1.9373
Multiples of: 1

                
STGWA25H120F2


IGBT Transistors Trench gate field-stop IGBT, H series 1200 V, 25 A high speed
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STMicroelectronics 5238
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USD 3.3932
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Single1200 V2.5 V20 V50 A250 nA    SiThrough Hole375 W- 55 C+ 175 C900 - 1300V Igbts
IGW25N120H3FKSA1


IGBT Transistors IGBT PRODUCTS
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Infineon 5173
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USD 2.783
Multiples of: 1

Single1200 V2.05 V+/- 20 V50 A600 nA  TO - 247 - 3TubeSiThrough Hole326 W- 40 C+ 175 CXgw25n120
IKW50N65H5


IGBT Transistors ENGINEERING SAMPLES TRENCHSTOP-5 IGBT
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Infineon 4975
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USD 2.4699
Multiples of: 1

Single650 V2.1 V20 V80 A100 nA  PG - TO - 247 - 3TubeSiThrough Hole145 W- 40 C+ 175 CTrenchstop 5 H5
IKW30N60T


IGBT Transistors LOW LOSS DuoPack 600V 30A
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Infineon 4857
Ships to you
between Tue. 07 May to Fri. 10 May Calender.png

USD 2.2332
Multiples of: 1

Single600 V1.5 V+/- 20 V60 A100 nA  TO - 247 - 3TubeSiThrough Hole187 W- 40 C+ 150 CIkw30n60
IGW30N65L5XKSA1


IGBT Transistors 650V IGBT Trenchstop 5
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Infineon 4850
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USD 2.1275
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Single650 V1.05 V20 V85 A100 nA  TO - 247 - 3TubeSiThrough Hole227 W- 40 C+ 175 CTrenchstop 5 L5
STGD3HF60HDT4


IGBT Transistors 4.5 A 600V IGBT 20V VGE 25A IFSM
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STMicroelectronics 4850
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between Tue. 23 Apr to Mon. 29 Apr Calender.png

USD 0.4588
Multiples of: 2500

 600 V2.95 V20 V7.5 A100 nA38 W DPAKReelSiSmd/Smt38 W- 55 C+ 150 CStgd3hf60hd
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