About IGBT Transistors

IGBT Transistors

An IGBT (Insulated Gate Bipolar Transistor) is a semiconductor device that combines the high switching speed of a metal-oxide-semiconductor field-effect transistor (MOSFET) and the high-current and low-saturation-voltage capability of a bipolar junction transistor (BJT). It is used in inverters, power converters, motor drives, and other power electronic applications. An IGBT has an isolated gate electrode, allowing it to be driven either by voltage or current. When operating, the gate voltage is applied to the gate electrode to control the current flow through the device. Due to its versatile design and high switching speed, it is the most commonly used power switch in most power applications.

IGBT Transistors

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(Ex. GST)(▲▼)		Enter Qty ConfigurationCollector- Emitter Voltage VCEO MaxCollector-Emitter Saturation VoltageMaximum Gate Emitter VoltageContinuous Collector Current at 25 CGate-Emitter Leakage CurrentPower DissipationQualificationPackage / CasePackagingTechnologyMounting StylePd - Power DissipationMinimum Operating TemperatureMaximum Operating TemperatureSeries
  
                    
BIDW20N60T


IGBT Transistors IGBT Discrete 600V, 20A in TO-247
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Bourns 4074
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USD 2.5443
Multiples of: 1

Single600 V1.7 V- 20 V , + 20 V40 A   TO - 247 - 3TubeSiThrough Hole192 W- 55 C+ 150 CBID
AOD5B65M1


IGBTs 650V 10A TO-252-2 (DPAK) RoHS
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Alpha & Omega 4034
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USD 0.5434
Multiples of: 1

                
FGHL75T65LQDT


IGBT Transistors FS4 LOW VCESAT IGBT 650V 75A TO247-3L WITH FULL RATED CURRENT DIODE
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ON Semiconductor 3955
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USD 5.4034
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GT30N135SRA,S1E


IGBT Transistors DISCRETE IGBT TRANSISTOR TO-247 Vces=1350V Ic=30A
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Toshiba 3900
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USD 2.16
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         Reel , Cut Tape      
APT25GT120BRG


IGBT Transistors Insulated Gate Bipolar Transistor - NPT Med Frequency - Single
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Microchip 3849
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USD 6.3969
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Single1.2 kV3.2 V30 V54 A120 nA  TO - 247 - 3TubeSiThrough Hole347 W- 55 C+ 150 C 
RGT30TM65DGC9


IGBT Trench Field Stop 650 V 14 A 32 W Through Hole TO-220NFM
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ROHM 3778
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USD 1.449
Multiples of: 1

Single650 V1.65 V30 V14 A200 nA  TO - 220 - 3TubeSiThrough Hole32 W- 40 C+ 175 C 
IGB30N60H3ATMA1


IGBT Transistors INDUSTRY 14
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Infineon 3773
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USD 2.1262
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FGH40T120SMD


Transistor: IGBT; 1.2kV; 40A; 277W; TO247
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ON Semiconductor 3693
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USD 6.0532
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      277 W         
FGH75T65SQD_F155


IGBT Transistors 650V FS4 Trench IGBT
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ON Semiconductor 3661
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USD 3.4385
Multiples of: 1

Single650 V1.6 V+/- 20 V150 A+/- 400 nA  TO - 247 - 3BulkSiThrough Hole375 W- 55 C+ 175 CFgh75t65sqd
TIG065E8-TL-H


IGBT Transistors HIGH POWER SWITCHING
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ON Semiconductor 285
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USD 0.3457
Multiples of: 1

Single Quad Collector Triple Emitter400 V4.2 V+/- 4 V150 A10 uA  ECH - 8Reel Smd/Smt - 40 C+ 150 CTig065e8
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