About IGBT Transistors

Ixys IGBT Transistors

An IGBT (Insulated Gate Bipolar Transistor) is a semiconductor device that combines the high switching speed of a metal-oxide-semiconductor field-effect transistor (MOSFET) and the high-current and low-saturation-voltage capability of a bipolar junction transistor (BJT). It is used in inverters, power converters, motor drives, and other power electronic applications. An IGBT has an isolated gate electrode, allowing it to be driven either by voltage or current. When operating, the gate voltage is applied to the gate electrode to control the current flow through the device. Due to its versatile design and high switching speed, it is the most commonly used power switch in most power applications.
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Enter Qty ConfigurationCollector- Emitter Voltage VCEO MaxCollector-Emitter Saturation VoltageMaximum Gate Emitter VoltageContinuous Collector Current at 25 CGate-Emitter Leakage CurrentPower DissipationQualificationPackage / CasePackagingTechnologyMounting StylePd - Power DissipationMinimum Operating TemperatureMaximum Operating TemperatureSeries
  
                    
IXGH48N60B3D1


IGBT Transistors 75 Amps 600V 1.05 V Rds
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IXYS Availability : 226
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USD 7.527

Multiples of: 1

Single600 V1.8 V20 V 100 nA  TO - 247AD - 3TubeSiThrough Hole300 W- 55 C+ 150 CIxgh48n60
IXYH60N90C3


IGBT Transistors 900V 60A 2.7V XPT IGBT GenX3
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IXYS Availability : 226
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USD 6.5051

Multiples of: 1

Single900 V2.7 V20 V140 A100 nA  TO - 247AD - 3TubeSiThrough Hole - 55 C+ 175 CPlanar
IXA12IF1200PB


IGBT Transistors XPT 1200V IGBT GenX3 XPT IGBT
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IXYS Availability : 224
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USD 2.9508

Multiples of: 1

Single1200 V1.8 V20 V20 A500 nA  TO - 220 - 3TubeSiThrough Hole85 W- 55 C+ 150 CIxa12if1200
IXGH20N120A3


IGBT Transistors G-SERIES A3/B3/C3 GENX3 IGBT 1200V 20A
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IXYS Availability : 209
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USD 5.9016

Multiples of: 1

Single1.2 kV2.3 V+/- 20 V40 A100 nA  TO - 247AD - 3TubeSiThrough Hole180 W- 55 C+ 150 CIxgh20n120
IXYH40N90C3D1


IGBT Transistors XPT 900V IGBT GenX3 XPT IGBT
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IXYS Availability : 209
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USD 8.5305

Multiples of: 1

Single900 V2.2 V20 V90 A100 nA  TO - 247AD - 3TubeSiThrough Hole500 W- 55 C+ 150 CIxyh40n90
IXYP20N65C3D1


IGBT Transistors IGBT XPT-GENX3
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IXYS Availability : 202
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USD 2.6155

Multiples of: 1

         TubeSi    Planar
IXGA48N60A3


IGBT Transistors 48 Amps 600V
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IXYS Availability : 180
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USD 4.2921

Multiples of: 1

         TubeSi    Ixga48n60
IXYA20N65C3D1


IGBT Transistors Disc IGBT XPT-GenX3 TO-263D2
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IXYS Availability : 174
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USD 3.2995

Multiples of: 1

Single650 V2.27 V20 V50 A100 nA  TO - 263AA - 3 SiSmd/Smt200 W- 55 C+ 175 C 
IXGH50N90B2


IGBT Transistors 50 Amps 900V 2.7 Rds
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IXYS Availability : 173
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USD 7.4306

Multiples of: 1

Single900 V 20 V    TO - 247AD - 3TubeSiThrough Hole - 55 C+ 150 CIxgh50n90
IXXH40N65B4


IGBT Transistors 650V/120A TRENCH IGBT GENX4 XPT
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IXYS Availability : 169
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USD 4.9761

Multiples of: 1

Single650 V1.5 V20 V120 A100 nA  TO - 247AD - 3TubeSiThrough Hole455 W- 55 C+ 175 CIxxh40n65
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