Advance Technical Information TM GenX3 600V IGBT V = 600V IXGH36N60B3 CES I = 36A C110 V 1.8V CE(sat) Medium-Speed Low-Vsat PT IGBT for 5 - 40kHz Switching TO-247 Symbol Test Conditions Maximum Ratings V T = 25C to 150C 600 V CES J G V T = 25C to 150C, R = 1M 600 V C CGR J GE Tab E V Continuous 20 V GES V Transient 30 V GEM I T = 25C 92 A C25 C G = Gate C = Collector I T = 110C 36 A C110 C E = Emitter Tab = Collector I T = 25C, 1ms 200 A CM C SSOA V = 15V, T = 125C, R = 5 I = 80 A GE VJ G CM Features (RBSOA) Clamped Inductive Load V V CE CES z Optimized for Low Conduction and P T = 25C 250 W C C Switching Losses T -55 ... +150 C z J Square RBSOA z T 150 C International Standard Package JM T -55 ... +150 C stg Advantages T 1.6mm (0.062 in.) from Case for 10s 300 C L T Plastic Body for 10s 260 C z SOLD High Power Density z Low Gate Drive Requirement M Mounting Torque 1.13/10 Nm/lb.in. d Weight 6 g Applications z Power Inverters z UPS z Motor Drives z SMPS Symbol Test Conditions Characteristic Values z PFC Circuits (T = 25C Unless Otherwise Specified) Min. Typ. Max. J z Battery Chargers BV I = 250A, V = 0V 600 V z CES C GE Welding Machines z V I = 250A, V = V 3.0 5.0 V Lamp Ballasts GE(th) C CE GE I V = V , V = 0V 25 A CES CE CES GE T = 125C 250 A J I V = 0V, V = 20V 100 nA GES CE GE V I = 30A, V = 15V, Note 1 1.5 1.8 V CE(sat) C GE DS100236(02/10) 2010 IXYS CORPORATION, All Rights ReservedIXGH36N60B3 Symbol Test Conditions Characteristic Values TO-247 Outline (IXGH) (T = 25C, Unless Otherwise Specified) Min. Typ. Max. J g I = 30A, V = 10V, Note 1 28 42 S fs C CE C 2280 pF ies P C V = 25V, V = 0V, f = 1MHz 120 pF oes CE GE C 32 pF res Q 80 nC g Q I = 30A, V = 15V, V = 0.5 V 12 nC ge C GE CE CES Q 36 nC gc t 19 ns Terminals: 1 - Gate 2 - Collector d(on) Inductive Load, T = 25C 3 - Emitter J t 24 ns ri Dim. Millimeter Inches E 0.54 mJ I = 30A, V = 15V on C GE Min. Max. Min. Max. t 125 200 ns A 4.7 5.3 .185 .209 d(off) V = 400V, R = 5 A 2.2 2.54 .087 .102 CE G 1 t 100 160 ns A 2.2 2.6 .059 .098 fi 2 b 1.0 1.4 .040 .055 E 0.8 1.5 mJ off b 1.65 2.13 .065 .084 1 b 2.87 3.12 .113 .123 2 t 19 ns d(on) C .4 .8 .016 .031 t 26 ns D 20.80 21.46 .819 .845 Inductive Load, T = 125C ri J E 15.75 16.26 .610 .640 E 0.9 mJ on e 5.20 5.72 0.205 0.225 I = 30A, V = 15V C GE L 19.81 20.32 .780 .800 t 180 ns d(off) L1 4.50 .177 t V = 400V, R = 5 170 ns P 3.55 3.65 .140 .144 fi CE G Q 5.89 6.40 0.232 0.252 E 1.5 mJ off R 4.32 5.49 .170 .216 S 6.15 BSC 242 BSC R 0.50 C/W thJC R 0.21 C/W thCS Note 1. Pulse test, t 300s, duty cycle, d 2%. ADVANCE TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute aconsidered reflectio of the anticipated result. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or moreof the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537