About IGBT Transistors

On Semiconductor IGBT Transistors

An IGBT (Insulated Gate Bipolar Transistor) is a semiconductor device that combines the high switching speed of a metal-oxide-semiconductor field-effect transistor (MOSFET) and the high-current and low-saturation-voltage capability of a bipolar junction transistor (BJT). It is used in inverters, power converters, motor drives, and other power electronic applications. An IGBT has an isolated gate electrode, allowing it to be driven either by voltage or current. When operating, the gate voltage is applied to the gate electrode to control the current flow through the device. Due to its versatile design and high switching speed, it is the most commonly used power switch in most power applications.

IGBT Transistors

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(Ex. GST)(▲▼)		Enter Qty ConfigurationCollector- Emitter Voltage VCEO MaxCollector-Emitter Saturation VoltageMaximum Gate Emitter VoltageContinuous Collector Current at 25 CGate-Emitter Leakage CurrentPower DissipationQualificationPackage / CasePackagingTechnologyMounting StylePd - Power DissipationMinimum Operating TemperatureMaximum Operating TemperatureSeries
  
                    
SGH40N60UFDTU


IGBTs 600V 40A TO-3P RoHS
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ON Semiconductor 1746
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USD 2.9352
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Single600 V2.1 V+/- 20 V40 A+/- 100 nA160 W TO - 3P - 3Tube Through Hole - 55 C+ 150 CSgh40n60
FGD3N60LSDTM


IGBT Transistors 600V IGBT HID Application
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ON Semiconductor 1721
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USD 0.5566
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Single600 V +/- 20 V    DPAK - 3ReelSiSmd/Smt - 55 C+ 150 CFgd3n60
FGP20N60UFDTU


IGBT Transistors 600V, 20A Field Stop
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ON Semiconductor 1545
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USD 2.1587
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Single600 V +/- 20 V    TO - 220 - 3TubeSiThrough Hole - 55 C+ 150 CFgp20n60ufd
NGTB40N65FL2WG


ON Semiconductor IGBT Transistors 650V40A FAST IGBT FSII T
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ON Semiconductor 1256
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USD 2.7621
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Single650 V2.1 V20 V80 A200 nA  TO - 247 - 3TubeSiThrough Hole366 W- 55 C+ 175 C 
NGTB25N120FL3WG


IGBT Transistors IGBT 1200V 25A FS3 SOLAR/
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ON Semiconductor 1164
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USD 3.5982
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Single1.2 kV1.7 V+/- 20 V100 A200 nA  TO 247 - 3TubeSiThrough Hole349 W- 55 C+ 175 C 
FGA60N65SMD


Transistor: IGBT; 650V; 60A; 300W; TO3P
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ON Semiconductor 1138
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USD 2.8986
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      300 W         
NGTB40N120FL3WG


IGBT Transistors IGBT 1200V 40A FS3 SOLAR/
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ON Semiconductor 1129
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USD 4.5
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Single1.2 kV1.7 V+/- 20 V160 A200 nA  TO 247 - 3TubeSiThrough Hole454 W- 55 C+ 175 C 
FGL40N120ANDTU


Transistor: IGBT; 1.2kV; 40A; 200W; TO264
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ON Semiconductor 976
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USD 16.5114
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      200 W         
FGH40N60SMD


igbts field stop 600v 80a to-247 (ac) rohs
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ON Semiconductor 909
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USD 4.0781
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HGTP5N120BND


IGBT Transistors 21a 1200V IGBT NPT Series N-Ch
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ON Semiconductor 848
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USD 5.0814
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Single1200 V2.45 V+/- 20 V21 A+/- 250 nA167 W TO - 220 - 3Tube Through Hole - 55 C+ 150 CHgtp5n120
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