About IGBT Transistors

On Semiconductor IGBT Transistors

An IGBT (Insulated Gate Bipolar Transistor) is a semiconductor device that combines the high switching speed of a metal-oxide-semiconductor field-effect transistor (MOSFET) and the high-current and low-saturation-voltage capability of a bipolar junction transistor (BJT). It is used in inverters, power converters, motor drives, and other power electronic applications. An IGBT has an isolated gate electrode, allowing it to be driven either by voltage or current. When operating, the gate voltage is applied to the gate electrode to control the current flow through the device. Due to its versatile design and high switching speed, it is the most commonly used power switch in most power applications.

IGBT Transistors

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(Ex. GST)(▲▼)		Enter Qty ConfigurationCollector- Emitter Voltage VCEO MaxCollector-Emitter Saturation VoltageMaximum Gate Emitter VoltageContinuous Collector Current at 25 CGate-Emitter Leakage CurrentPower DissipationQualificationPackage / CasePackagingTechnologyMounting StylePd - Power DissipationMinimum Operating TemperatureMaximum Operating TemperatureSeries
  
                    
FGB3236_F085


Fairchild Semiconductor IGBT Transistors 320MJ 360V N-CH IGNITION IGBT
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ON Semiconductor 530
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USD 1.9021
Multiples of: 1

         ReelSi    Fgb3236_F085
FGH40N60SFTU


IGBT Transistors N-CH / 40A 600V FS Planar
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ON Semiconductor 517
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USD 2.346
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Single600 V2.3 V20 V80 A400 nA290 W TO - 247Tube Through Hole - 55 C+ 150 CFgh40n60
SGP10N60RUFDTU


IGBT Transistors Dis Short Circuit Rated IGBT
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ON Semiconductor 507
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USD 1.4539
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Single600 V2.2 V+/- 20 V16 A+/- 100 nA75 W TO - 220 - 3TubeSiThrough Hole75 W- 55 C+ 150 CSgp10n60
FGP5N60LS


IGBT Transistors 600V/5A Field Stop Low Vcesat
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ON Semiconductor 500
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USD 0.6831
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 600 V1.8 V20 V10 A400 nA83 W TO - 220TubeSiThrough Hole83 W- 55 C+ 125 CFgp5n60
AFGHL50T65SQ


IGBT Transistors 650V50A FS4 IGBT TO-247LL
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ON Semiconductor 439
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USD 2.438
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FGH40T120SMD_F155


IGBT Transistors 1200V, 40A Field Stop Trench IGBT
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ON Semiconductor 436
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USD 19.3942
Multiples of: 30

Single1200 V2 V+/- 25 V80 A400 nA555 W TO - 247G03 - 3TubeSiThrough Hole555 W- 55 C+ 175 CFgh40t120
FGY160T65SPD_F085


IGBT Transistors 650V Field Stop Gen3 Trench IGBT
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ON Semiconductor 434
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USD 10.281
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Single650 V1.6 V+/- 20 V240 A+/- 250 nA  TO - 247 - 3BulkSiThrough Hole882 W- 55 C+ 175 CFgy160t65s_F085
FGH75T65SQDTL4


IGBT Transistors 650V FS4 Trench IGBT
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ON Semiconductor 431
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USD 5.3791
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Single650 V1.6 V+/- 20 V150 A400 nA  TO - 247 - 3Tube Through Hole375 W- 55 C+ 175 CFgh75t65sqdtl4
FGPF4565


Fairchild Semiconductor IGBT Transistors
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ON Semiconductor 412
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USD 1.1124
Multiples of: 1

 650 V1.88 V25 V170 A400 nA  TO - 220FTubeSiThrough Hole30 W- 55 C+ 150 CFgpf4565
FGHL50T65MQDT


IGBT Transistors FS4 MID SPEED IGBT 650V 50A TO247-3L WITH FULL RATED CURRENT DIODE
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ON Semiconductor 410
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USD 3.5431
Multiples of: 1

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