About IGBT Transistors

On Semiconductor IGBT Transistors

An IGBT (Insulated Gate Bipolar Transistor) is a semiconductor device that combines the high switching speed of a metal-oxide-semiconductor field-effect transistor (MOSFET) and the high-current and low-saturation-voltage capability of a bipolar junction transistor (BJT). It is used in inverters, power converters, motor drives, and other power electronic applications. An IGBT has an isolated gate electrode, allowing it to be driven either by voltage or current. When operating, the gate voltage is applied to the gate electrode to control the current flow through the device. Due to its versatile design and high switching speed, it is the most commonly used power switch in most power applications.

IGBT Transistors

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(Ex. GST)(▲▼)		Enter Qty ConfigurationCollector- Emitter Voltage VCEO MaxCollector-Emitter Saturation VoltageMaximum Gate Emitter VoltageContinuous Collector Current at 25 CGate-Emitter Leakage CurrentPower DissipationQualificationPackage / CasePackagingTechnologyMounting StylePd - Power DissipationMinimum Operating TemperatureMaximum Operating TemperatureSeries
  
                    
SGL160N60UFDTU


Transistor: IGBT; 600V; 80A; 100W; TO264
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ON Semiconductor 845
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USD 21.4889
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ISL9V5045S3ST_F085


IGBT Transistors 500mJ, 450V EcoSPARK N-Chan Ignition IGBT
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ON Semiconductor 776
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USD 3.0244
Multiples of: 1

Single480 V1.25 V10 V51 A 300 mW D2PAK - 3ReelSiSmd/Smt300 mW- 40 C+ 175 CIsl9v5045
FGB3040G2_F085


Fairchild Semiconductor IGBT Transistors ECOSPARK 2 IGNITION IGBT
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ON Semiconductor 751
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USD 1.8975
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Single400 V1.15 V+/- 10 V41 A   TO - 263AB - 3ReelSiSmd/Smt150 W- 55 C+ 175 CFgb3040g2_F085
ISL9V3040S3ST-F085C


IGBT Transistors ECOSPARK1 IGN-IGBT
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ON Semiconductor 712
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USD 0.8124
Multiples of: 735

Single400 V1.25 V10 V21 A  Aec - Q101DPAK - 3Cut TapeSiSmd/Smt150 W- 55 C+ 175 C 
FGH40N60UFDTU


Transistor: IGBT; 600V; 40A; 116W; TO247
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ON Semiconductor 690
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USD 2.875
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      116 W         
FGB7N60UNDF


IGBT Transistors 600V 7A NPT IGBT
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ON Semiconductor 688
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USD 1.0333
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Single600 V2.1 V+/- 20 V14 A+/- 10 uA83 W TO - 263AB (D2 PAK)TubeSiSmd/Smt83 W- 55 C+ 150 CFgb7n60undf
FGA180N33ATDTU


IGBT Transistors 330V 180A PDP Trench
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ON Semiconductor 668
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USD 3.3286
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Single330 V +/- 30 V    TO - 3PN - 3TubeSiThrough Hole - 55 C+ 150 CFga180n33atdtu
FGY120T65SPD_F085


IGBT Transistors 650V FS Trench IGBT Gen3
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ON Semiconductor 639
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USD 9.959
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Single650 V1.5 V+/- 20 V240 A+/- 250 nA  TO - 247 - 3BulkSiThrough Hole882 W- 55 C+ 175 CFgy120t65s_F085
FGH40T65SPD-F085


IGBT Transistors 650V 40A Field Stop Trench IGBT
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ON Semiconductor 594
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USD 2.7866
Multiples of: 1

Single650 V1.85 V+/- 20 V80 A+/- 400 nA  TO - 247 - 3 SiThrough Hole267 W- 55 C+ 175 CFgh40t65sp_F085
FGY100T65SCDT


IGBT Transistors FS3TIGBT TO247 100A 650V
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ON Semiconductor 546
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USD 6.6634
Multiples of: 1

Single650 V1.5 V25 V200 A400 nA  TO - 247 - 3TubeSiThrough Hole750 W- 55 C+ 175 C 
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