About IGBT Transistors

Rohm IGBT Transistors

An IGBT (Insulated Gate Bipolar Transistor) is a semiconductor device that combines the high switching speed of a metal-oxide-semiconductor field-effect transistor (MOSFET) and the high-current and low-saturation-voltage capability of a bipolar junction transistor (BJT). It is used in inverters, power converters, motor drives, and other power electronic applications. An IGBT has an isolated gate electrode, allowing it to be driven either by voltage or current. When operating, the gate voltage is applied to the gate electrode to control the current flow through the device. Due to its versatile design and high switching speed, it is the most commonly used power switch in most power applications.

IGBT Transistors

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(Ex. GST)(▲▼)		Enter Qty ConfigurationCollector- Emitter Voltage VCEO MaxCollector-Emitter Saturation VoltageMaximum Gate Emitter VoltageContinuous Collector Current at 25 CGate-Emitter Leakage CurrentPower DissipationQualificationPackage / CasePackagingTechnologyMounting StylePd - Power DissipationMinimum Operating TemperatureMaximum Operating TemperatureSeries
  
                    
RGT50TM65DGC9


IGBT Trench Field Stop 650 V 21 A 47 W Through Hole TO-220NFM
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ROHM Availability : 0
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USD 1.5386
Multiples of: 1

Single650 V1.65 V30 V30 A200 nA  TO - 263 - 3TubeSiSmd/Smt133 W- 40 C+ 175 C 
RGTH40TK65DGC11


IGBT Transistors IGBT HIGH VOLT AND CURRENT AP
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ROHM Availability : 0
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USD 1.6613
Multiples of: 1

Single650 V1.6 V30 V23 A200 nA  TO - 3PFMTubeSiThrough Hole56 W- 40 C+ 175 C 
RGPR30NS40HRTL


IGBT Transistors 400V 30A 1.6V Vce Ignition IGBT
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USD 1.8525
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Single430 V1.6 V10 V30 A0.6 mA Aec - Q101TO - 263 - 3Cut Tape Smd/Smt125 W- 40 C+ 175 CRgp
RGTH60TS65DGC11


ROHM Semiconductor IGBT Transistors
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ROHM Availability : 0
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USD 2.0489
Multiples of: 1

 650 V1.6 V+/- 30 V58 A+/- 200 nA   TubeSiThrough Hole194 W- 40 C+ 175 CRgth60ts65
RGT80TS65DGC11


ROHM Semiconductor IGBT Transistors
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ROHM Availability : 0
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USD 2.0728
Multiples of: 1

 650 V1.65 V+/- 30 V70 A+/- 200 nA  TO - 247 - 3TubeSiThrough Hole234 W- 40 C+ 175 CRgt80ts65d
RGT40TM65DGC9


IGBT Trench Field Stop 650 V 17 A 39 W Through Hole TO-220NFM
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ROHM Availability : 0
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USD 2.1125
Multiples of: 1

Single650 V1.65 V30 V17 A200 nA  TO - 220 - 3TubeSiThrough Hole39 W- 40 C+ 175 C 
RGCL80TK60GC11


IGBT Transistors IGBT HIGH VOLT AND CURRENT AP
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ROHM Availability : 0
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USD 2.3828
Multiples of: 1

Single600 V1.4 V30 V35 A200 nA  TO - 3PFMTubeSiThrough Hole57 W- 40 C+ 175 C 
RGCL80TS60DGC11


IGBT Transistors IGBT HIGH VOLT AND CURRENT AP
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ROHM Availability : 0
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USD 2.418
Multiples of: 1

Single600 V1.4 V30 V65 A200 nA  TO - 247 - 3BulkSiThrough Hole148 W- 40 C+ 175 C 
RGS00TS65DHRC11


IGBT Transistors IGBT FieldStop Trnch 50A; TO-247N; 650V
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ROHM Availability : 0
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USD 2.6072
Multiples of: 1

Single650 V1.65 V30 V88 A200 nA Aec - Q101TO - 247N - 3TubeSiThrough Hole326 W- 40 C+ 175 C 
RGTH80TS65DGC11


ROHM Semiconductor IGBT Transistors
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

ROHM Availability : 0
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USD 2.6966
Multiples of: 1

 650 V1.6 V+/- 30 V70 A+/- 200 nA  TO - 247 - 3TubeSiThrough Hole234 W- 40 C+ 175 CRgth80ts65d
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