RGPR30NS40HRTL ROHM

RGPR30NS40HRTL electronic component of ROHM
RGPR30NS40HRTL ROHM
RGPR30NS40HRTL IGBT Transistors
RGPR30NS40HRTL  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of RGPR30NS40HRTL IGBT Transistors across the USA, India, Europe, Australia, and various other global locations. RGPR30NS40HRTL IGBT Transistors are a product manufactured by ROHM. We provide cost-effective solutions for IGBT Transistors, ensuring timely deliveries around the world.

Part No. RGPR30NS40HRTL
Manufacturer: ROHM
Category: IGBT Transistors
Description: IGBT Transistors 400V 30A 1.6V Vce Ignition IGBT
Datasheet: RGPR30NS40HRTL Datasheet (PDF)
Price (USD)
1: USD 3.3696 ea
Line Total: USD 3.37 
Availability : 0
  
QtyUnit Price
1$ 3.3696
10$ 2.1632
100$ 2.0111
500$ 1.9175

Availability 0
Ship by Fri. 03 Oct to Thu. 09 Oct
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 3.3696
10$ 2.1632
100$ 2.0111
500$ 1.9175


Availability 0
Ship by Wed. 01 Oct to Fri. 03 Oct
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 2.2815
10$ 1.925
25$ 1.8125
100$ 1.5625
500$ 1.284
1000$ 1.1196

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Configuration
Collector- Emitter Voltage VCEO Max
Collector-Emitter Saturation Voltage
Maximum Gate Emitter Voltage
Continuous Collector Current at 25 C
Gate-Emitter Leakage Current
Qualification
Package / Case
Packaging
Mounting Style
Pd - Power Dissipation
Minimum Operating Temperature
Maximum Operating Temperature
Series
Continuous Collector Current Ic Max
Brand
Product Type
Factory Pack Quantity :
Subcategory
Cnhts
Hts Code
Mxhts
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the RGPR30NS40HRTL from our IGBT Transistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the RGPR30NS40HRTL and other electronic components in the IGBT Transistors category and beyond.

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RGPR30NS40HR 400V 30A Ignition IGBT Datasheet Outline LPDS (TO-263S) / TO-262 BV 40030V CES (2) I 30A C V 1.6V CE(sat) (Typ.) (1) E (3) 300mJ AS (1)(2)(3) Features Inner Circuit 1) Low Collector - Emitter Saturation Voltage (2) (1) Gate 2) High Self-Clamped Inductive Switching Energy (2) Collector (1) 3) Built in Gate-Emitter Protection Diode (3) Emitter 4) Built in Gate-Emitter Resistance 5) Qualified to AEC-Q101 (3) 6) Pb - free Lead Plating RoHS Compliant Packaging Specifications Packaging Taping / Tube Reel Size (mm) 330 / - Applications Ignition Coil Driver Circuits Tape Width (mm) 24 / - Type Solenoid Driver Circuits Basic Ordering Unit (pcs) 1,000 / 1,000 Packing Code TL / C9 RGPR30NS40 Marking Absolute Maximum Ratings (at T = 25C unless otherwise specified) C Parameter Symbol Value Unit V Collector - Emitter Voltage 430 V CES Emitter-Collector Voltage (V = 0V) V 25 V GE EC V Gate - Emitter Voltage 10 V GES Collector Current I 30 A C T = 25C E 300 mJ j AS Avalanche Energy (Single Pulse) *2 T = 150C E 180 mJ j AS Power Dissipation P 125 W D T Operating Junction Temperature 40 to +175 C j T Storage Temperature 55 to +175 C stg www.rohm.com 2017 ROHM Co., Ltd. All rights reserved. 2017.08 - Rev.B 1/9Datasheet RGPR30NS40HR Thermal Resistance Values Parameter Symbol Unit Min. Typ. Max. Thermal Resistance IGBT Junction - Case R - - 1.20 C/W (j-c) Electrical Characteristics (at T = 25C unless otherwise specified) j Values Parameter Symbol Conditions Unit Min. Typ. Max. I = 2mA, V = 0V C GE Collector - Emitter Breakdown BV T = 25C 370 400 430 V CES j Voltage *2 T = 40 to 175C 365 - 435 V j Emitter - Collector Breakdown BV I = 10mA, V = 0V 25 35 - V EC C GE Voltage Gate - Emitter Breakdown BV I = 5mA, V = 0V - V 12 17 GES G CE Voltage V = 250V, V = 0V CE GE I T = 25C Collector Cut - off Current -- 7 A CES j *2 - - 100 A T = 150C j Gate - Emitter Leakage Current I V = 10V, V = 0V mA 0.4 0.6 1.2 GES GE CE V = 5V, I = 12mA CE C Gate - Emitter Threshold V T = 25C 1.3 1.7 2.1 V GE(th) j Voltage *2 - 1.3 - V T = 150C j I = 12A, V = 5V C GE Collector - Emitter Saturation V T = 25C - 1.60 2.00 V CE(sat) j Voltage T = 150C - 1.80 - V j I = 5A, V = 4.5V C GE Collector - Emitter Saturation V T = 25C - 1.17 1.50 V CE(sat) j Voltage T = 150C - 1.19 - V j www.rohm.com 2017 ROHM Co., Ltd. All rights reserved. 2017.08 - Rev.B 2/9

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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