About IGBT Transistors

Rohm IGBT Transistors

An IGBT (Insulated Gate Bipolar Transistor) is a semiconductor device that combines the high switching speed of a metal-oxide-semiconductor field-effect transistor (MOSFET) and the high-current and low-saturation-voltage capability of a bipolar junction transistor (BJT). It is used in inverters, power converters, motor drives, and other power electronic applications. An IGBT has an isolated gate electrode, allowing it to be driven either by voltage or current. When operating, the gate voltage is applied to the gate electrode to control the current flow through the device. Due to its versatile design and high switching speed, it is the most commonly used power switch in most power applications.
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Enter Qty ConfigurationCollector- Emitter Voltage VCEO MaxCollector-Emitter Saturation VoltageMaximum Gate Emitter VoltageContinuous Collector Current at 25 CGate-Emitter Leakage CurrentPower DissipationQualificationPackage / CasePackagingTechnologyMounting StylePd - Power DissipationMinimum Operating TemperatureMaximum Operating TemperatureSeries
  
                    
RGT16TM65DGC9


IGBT Transistors FIELD STOP TRENCH IGBT
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

ROHM Availability : 959
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USD 1.242

Multiples of: 1

Single650 V1.65 V30 V9 A200 nA  TO - 220 - 3TubeSiThrough Hole22 W- 40 C+ 175 C 
RGT8NL65DGTL


IGBT Trench Field Stop 650 V 8 A 65 W Surface Mount LPDS
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ROHM Availability : 956
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USD 0.9775

Multiples of: 1

Single650 V1.65 V30 V8 A200 nA  TO - 263L - 3Cut TapeSiSmd/Smt65 W- 40 C+ 175 C 
RGT8NS65DGC9


IGBT Trench Field Stop 650 V 8 A 65 W Through Hole TO-262
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ROHM Availability : 944
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USD 1.092

Multiples of: 1

Single650 V1.65 V30 V8 A200 nA  TO - 262 - 3TubeSiThrough Hole65 W- 40 C+ 175 C 
RGT16NS65DGC9


IGBT Trench Field Stop 650 V 16 A 94 W Through Hole TO-262
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ROHM Availability : 930
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USD 1.3225

Multiples of: 1

Single650 V1.65 V30 V16 A200 nA  TO - 262 - 3TubeSiThrough Hole94 W- 40 C+ 175 C 
RGT20TM65DGC9


IGBT Transistors 650V 10A IGBT Field Stop Trench
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ROHM Availability : 905
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USD 1.3455

Multiples of: 1

         Tube      
RGT50NS65DGC9


IGBT Trench Field Stop 650 V 48 A 194 W Through Hole TO-262
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ROHM Availability : 888
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USD 2.024

Multiples of: 1

Single650 V1.65 V30 V48 A200 nA  TO - 262 - 3TubeSiThrough Hole194 W- 40 C+ 175 C 
RGT8NS65DGTL


IGBT Transistors 650V 4A Field Stop Trench IGBT
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ROHM Availability : 866
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USD 0.6164

Multiples of: 1

 650 V1.65 V+/- 30 V8 A+/- 200 nA  TO - 263 - 3ReelSiSmd/Smt65 W- 40 C+ 175 CRgt8ns65d
RGT30NS65DGC9


IGBT Transistors IGBT HIGH VOLT AND CURRENT AP
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

ROHM Availability : 861
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USD 1.5848

Multiples of: 1

Single650 V1.65 V30 V30 A200 nA  TO - 262 - 3TubeSiThrough Hole133 W- 40 C+ 175 C 
RGT16NL65DGTL


IGBT Transistors FIELD STOP TRENCH IGBT
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

ROHM Availability : 857
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USD 1.2535

Multiples of: 1

Single650 V1.65 V30 V16 A200 nA  TO - 263L - 3Cut TapeSiSmd/Smt94 W- 40 C+ 175 C 
RGTH00TS65GC13


IGBT Transistors IGBT
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

ROHM Availability : 851
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USD 3.3645

Multiples of: 1

Single650 V2.1 V30 V85 A   TO - 247GE - 3TubeSiThrough Hole277 W- 40 C+ 175 C 
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